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Results:
1-9
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Results: 9
Authors:
HAN JP
GUO X
MA TP
Citation: Jp. Han et al., MEMORY EFFECTS OF SRBI2TA2O9 CAPACITOR ON SILICON WITH A SILICON-NITRIDE BUFFER, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 733-741
Authors:
GATTI A
HAN JP
Citation: A. Gatti et Jp. Han, A TRIBUTE TO YACINE,KATEB, Europe-Revue littéraire mensuelle, 76(828), 1998, pp. 23-27
Authors:
HAN JP
MA TP
Citation: Jp. Han et Tp. Ma, SRBI2TA2O9 MEMORY CAPACITOR ON SI WITH A SILICON-NITRIDE BUFFER, Applied physics letters, 72(10), 1998, pp. 1185-1186
Authors:
HAN JP
MA TP
Citation: Jp. Han et Tp. Ma, TOP ELECTRODE DEPENDENCE OF FORMING GAS ANNEALING EFFECTS ON FERROELECTRIC-FILMS, Integrated ferroelectrics, 17(1-4), 1997, pp. 471-478
Authors:
HAN JP
GU J
MA TP
Citation: Jp. Han et al., SRBI2TA2O9(SBT) THIN-FILMS PREPARED BY ELECTROSTATIC SPRAY, Integrated ferroelectrics, 14(1-4), 1997, pp. 229-235
Authors:
HAN JP
Citation: Jp. Han, THE KOLTES,BERNARD,MARIE PHENOMENA - A LO OK AT HIS THEATRICAL CAREER, Europe-Revue littéraire mensuelle, 75(823-24), 1997, pp. 3-5
Authors:
HAN JP
Citation: Jp. Han, KOLTES,BERNARD,MARIE, Europe-Revue littéraire mensuelle, 75(823-24), 1997, pp. 132-134
Authors:
HAN JP
MA TP
Citation: Jp. Han et Tp. Ma, ELECTRODE DEPENDENCE OF HYDROGEN-INDUCED DEGRADATION IN FERROELECTRICPB(ZR,TI)O-3 AND SRBI2TA2O9 THIN-FILMS, Applied physics letters, 71(9), 1997, pp. 1267-1269
Authors:
BIRMINGHAM PK
DSIDA RM
GRAYHACK JJ
HAN JP
WHEELER M
PONGRACIC JA
COTE CJ
HALL SC
Citation: Pk. Birmingham et al., DO LATEX PRECAUTIONS IN CHILDREN WITH MYELODYSPLASIA REDUCE INTRAOPERATIVE ALLERGIC REACTIONS, Journal of pediatric orthopedics, 16(6), 1996, pp. 799-802
Risultati:
1-9
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