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Results:
1-7
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Results: 7
Authors:
HAN KM
SAH CT
Citation: Km. Han et Ct. Sah, POSITIVE OXIDE CHARGE FROM HOT HOLE INJECTION DURING CHANNEL-HOT-ELECTRON STRESS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1624-1627
Authors:
HAN KM
SAH CT
Citation: Km. Han et Ct. Sah, REDUCTION OF INTERFACE TRAPS IN P-CHANNEL MOS-TRANSISTORS DURING CHANNEL-HOT-HOLE STRESS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1380-1382
Authors:
SAH CT
NEUGROSCHEL A
HAN KM
Citation: Ct. Sah et al., CURRENT-ACCELERATED CHANNEL HOT-CARRIER STRESS OF MOS-TRANSISTORS, Electronics Letters, 34(2), 1998, pp. 217-219
Authors:
HAN KM
SAH CT
Citation: Km. Han et Ct. Sah, LINEAR REDUCTION OF DRAIN CURRENT WITH INCREASING INTERFACE RECOMBINATION IN NMOS TRANSISTORS STRESSED BY CHANNEL HOT-ELECTRONS, Electronics Letters, 33(21), 1997, pp. 1821-1822
Authors:
SAH CT
NEUGROSCHEL A
HAN KM
KAVALIEROS JT
Citation: Ct. Sah et al., PROFILING INTERFACE TRAPS IN MOS-TRANSISTORS BY THE DC CURRENT-VOLTAGE METHOD, IEEE electron device letters, 17(2), 1996, pp. 72-74
Authors:
HAN KM
NISHIDA T
Citation: Km. Han et T. Nishida, SEQUENTIAL SUBSTRATE AND CHANNEL HOT-ELECTRON INJECTION TO SEPARATE OXIDE AND INTERFACE TRAPS IN N-MOSTS, Solid-state electronics, 38(1), 1995, pp. 105-113
Authors:
NEUGROSCHEL A
SAH CT
HAN KM
CARROLL MS
NISHIDA T
KAVALIEROS JT
LU Y
Citation: A. Neugroschel et al., DIRECT-CURRENT MEASUREMENTS OF OXIDE AND INTERFACE TRAPS ON OXIDIZED SILICON, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1657-1662
Risultati:
1-7
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