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Citation: T. Lohner et al., ION-IMPLANTATION INDUCED ANOMALOUS SURFACE AMORPHIZATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 335-339

Authors: LOHNER T TOTH Z FRIED M KHANH NQ YANG GQ LU LC ZOU SC HANEKAMP LJ VANSILFHOUT A GYULAI J

Citation: T. Lohner et al., COMPARATIVE INVESTIGATION OF DAMAGE-INDUCED BY DIATOMIC AND MONOATOMIC ION-IMPLANTATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 524-527

Authors: LOHNER T FRIED M GYULAI J VEDAM K NGUYEN NV HANEKAMP LJ VANSILFHOUT A

Citation: T. Lohner et al., ION-IMPLANTATION-CAUSED SPECIAL DAMAGE PROFILES DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY IN CRYSTALLINE AND IN RELAXED (ANNEALED) AMORPHOUS-SILICON, Thin solid films, 233(1-2), 1993, pp. 117-121