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Results: 1-13 |
Results: 13
COMPARISON AND INVESTIGATION OF OHMIC CHARACTERISTICS IN THE NI AUZN AND CR/AUZN METAL SCHEMES/
Authors: YOUN DH HAO MS NAOI Y MAHANTY S SAKAI S
Citation: Dh. Youn et al., COMPARISON AND INVESTIGATION OF OHMIC CHARACTERISTICS IN THE NI AUZN AND CR/AUZN METAL SCHEMES/, JPN J A P 1, 37(9A), 1998, pp. 4667-4671
LATERAL OVERGROWTH OF THICK GAN ON PATTERNED GAN SUBSTRATE BY SUBLIMATION TECHNIQUE
Authors: WANG J TOTTORI S SATO H HAO MS ISHIKAWA Y SUGAHARA T YAMASHITA K SAKAI S
Citation: J. Wang et al., LATERAL OVERGROWTH OF THICK GAN ON PATTERNED GAN SUBSTRATE BY SUBLIMATION TECHNIQUE, JPN J A P 1, 37(8), 1998, pp. 4475-4476
OHMIC CONTACT TO P-TYPE GAN
Authors: YOUN DH HAO MS SATO H SUGAHARA T NAOI Y SAKAI S
Citation: Dh. Youn et al., OHMIC CONTACT TO P-TYPE GAN, JPN J A P 1, 37(4A), 1998, pp. 1768-1771
SURFACE PRETREATMENT OF BULK GAN FOR HOMOEPITAXIAL GROWTH BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: SATO H SUGAHARA T HAO MS NAOI Y KURAI S YAMASHITA K NISHINO K SAKAI S
Citation: H. Sato et al., SURFACE PRETREATMENT OF BULK GAN FOR HOMOEPITAXIAL GROWTH BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 37(2), 1998, pp. 626-631
DIRECT EVIDENCE THAT DISLOCATIONS ARE NONRADIATIVE RECOMBINATION CENTERS IN GAN
Authors: SUGAHARA T SATO H HAO MS NAOI Y KURAI S TOTTORI S YAMASHITA K NISHINO K ROMANO LT SAKAI S
Citation: T. Sugahara et al., DIRECT EVIDENCE THAT DISLOCATIONS ARE NONRADIATIVE RECOMBINATION CENTERS IN GAN, JPN J A P 2, 37(4A), 1998, pp. 398-400
STUDY OF THREADING DISLOCATIONS IN WURTZITE GAN FILMS GROWN ON SAPPHIRE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: HAO MS SUGAHARA T SATO H MORISHIMA Y
Citation: Ms. Hao et al., STUDY OF THREADING DISLOCATIONS IN WURTZITE GAN FILMS GROWN ON SAPPHIRE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 37(3A), 1998, pp. 291-293
POROUS GAAS FORMED BY A 2-STEP ANODIZATION PROCESS
Authors: HAO MS UCHIDA H SHAO CL SOGA T JIMBO T UMENO M
Citation: Ms. Hao et al., POROUS GAAS FORMED BY A 2-STEP ANODIZATION PROCESS, Journal of crystal growth, 179(3-4), 1997, pp. 661-664
A THEORETICAL-MODEL FOR THE TILT OF THE GAAS SI EPILAYERS/
Authors: HAO MS SHAO CL SOGA T JIMBO T UMENO M LIANG JW
Citation: Ms. Hao et al., A THEORETICAL-MODEL FOR THE TILT OF THE GAAS SI EPILAYERS/, Journal of crystal growth, 178(3), 1997, pp. 276-279
ASSESSMENT OF THE STRUCTURAL-PROPERTIES OF GAAS SI EPILAYERS USING X-RAY (004) AND (220) REFLECTIONS/
Authors: HAO MS WANG YT SHAO CL SOGA TS LIANG JW JIMBO T UMENO M
Citation: Ms. Hao et al., ASSESSMENT OF THE STRUCTURAL-PROPERTIES OF GAAS SI EPILAYERS USING X-RAY (004) AND (220) REFLECTIONS/, JPN J A P 1, 35(12A), 1996, pp. 6017-6018
CHARACTERIZATION AND IMPROVEMENT OF GAAS-LAYERS GROWN ON SI USING AN ULTRATHIN A-SI FILM AS A BUFFER LAYER
Authors: HAO MS SHAO CL SOGA T JIMBO T UMENO M LIANG JW ZHENG LX XIAO ZB XIAO JF
Citation: Ms. Hao et al., CHARACTERIZATION AND IMPROVEMENT OF GAAS-LAYERS GROWN ON SI USING AN ULTRATHIN A-SI FILM AS A BUFFER LAYER, JPN J A P 2, 35(8A), 1996, pp. 960-963
GROWTH OF GAAS ON SI BY USING A THIN SI FILM AS BUFFER LAYER
Authors: HAO MS LIANG JW JING XJ WANG YT DENG LS XIAO ZB ZHENG LX HU XW
Citation: Ms. Hao et al., GROWTH OF GAAS ON SI BY USING A THIN SI FILM AS BUFFER LAYER, Chinese Physics Letters, 13(1), 1996, pp. 42-45
PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER/
Authors: HAO MS LIANG JW ZHENG LX DENG LS XIAO ZB HU XW
Citation: Ms. Hao et al., PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER/, JPN J A P 2, 34(7B), 1995, pp. 900-902
PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER (VOL 34, PG L900, 1995)/
Authors: HAO MS LIANG JW ZHENG LX DENG LS XIAO ZB HU XW
Citation: Ms. Hao et al., PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER (VOL 34, PG L900, 1995)/, JPN J A P 2, 34(10B), 1995, pp. 1423-1423
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