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Results:
1-8
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Results: 8
Authors:
NAYAK DK
HAO MY
UMALI J
RAKKHIT R
Citation: Dk. Nayak et al., A COMPREHENSIVE STUDY OF PERFORMANCE AND RELIABILITY OF P, AS, AND HYBRID AS P NLDD JUNCTIONS FOR DEEP-SUBMICRON CMOS LOGIC TECHNOLOGY/, IEEE electron device letters, 18(6), 1997, pp. 281-283
Authors:
HAO MY
NAYAK D
RAKKHIT R
Citation: My. Hao et al., IMPACT OF BORON PENETRATION AT P-POLY()GATE OXIDE INTERFACE ON DEEP-SUBMICRON DEVICE RELIABILITY FOR DUAL-GATE CMOS TECHNOLOGIES/, IEEE electron device letters, 18(5), 1997, pp. 215-217
Authors:
LAI K
CHEN WM
HAO MY
LEE J
GARDNER M
FULFORD J
Citation: K. Lai et al., TURN-AROUND EFFECTS OF STRESS-INDUCED LEAKAGE CURRENT OF ULTRATHIN N2O-ANNEALED OXIDES, Applied physics letters, 67(5), 1995, pp. 673-675
Authors:
HAO MY
CHEN WM
LAI K
LEE JC
GARDNER M
FULFORD J
Citation: My. Hao et al., CORRELATION OF DIELECTRIC-BREAKDOWN WITH HOLE TRANSPORT FOR ULTRATHINTHERMAL OXIDES AND N2O OXYNITRIDES, Applied physics letters, 66(9), 1995, pp. 1126-1128
Authors:
LAI KF
HAO MY
CHEN WM
LEE JC
Citation: Kf. Lai et al., EFFECTS OF SURFACE PREPARATION ON THE ELECTRICAL AND RELIABILITY PROPERTIES OF ULTRATHIN THERMAL OXIDE, IEEE electron device letters, 15(11), 1994, pp. 446-448
Authors:
HAO MY
LAI KF
CHEN WM
LEE JC
Citation: My. Hao et al., SURFACE CLEANING EFFECT ON DIELECTRIC INTEGRITY FOR ULTRATHIN OXYNITRIDES GROWN IN N2O, Applied physics letters, 65(9), 1994, pp. 1133-1135
Authors:
HAO MY
MAITI B
LEE JC
Citation: My. Hao et al., NOVEL PROCESS FOR RELIABLE ULTRATHIN TUNNEL DIELECTRICS, Applied physics letters, 64(16), 1994, pp. 2102-2104
Authors:
HAO MY
HWANG H
LEE JC
Citation: My. Hao et al., SILICON-IMPLANTED SIO2 FOR NONVOLATILE MEMORY APPLICATIONS, Solid-state electronics, 36(9), 1993, pp. 1321-1324
Risultati:
1-8
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