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Results: 1-6 |
Results: 6

Authors: BALLO P RAJNIAK D MACKO P HARMATHA L
Citation: P. Ballo et al., DIVACANCY LEVELS IN SILICON AFTER NEUTRON-IRRADIATION, Radiation effects and defects in solids, 138(1-2), 1996, pp. 113-117

Authors: HARMATHA L NAGL V STUCHLIKOVA L GAZI M HALAJ J
Citation: L. Harmatha et al., DLTS STUDY OF DEEP TRAPS IN SI VARACTOR STRUCTURES, Solid-state electronics, 38(4), 1995, pp. 933-934

Authors: THURZO I GMUCOVA K CSABAY O HARMATHA L BURGHARDT H BEYER R
Citation: I. Thurzo et al., AN EXPERIMENTAL-STUDY OF SIOXNY SI INTERFACES PREPARED BY RAPID THERMAL-PROCESSING - EVIDENCE FOR 2 GROUPS OF INTERFACE STATES/, Physica status solidi. a, Applied research, 151(2), 1995, pp. 345-353

Authors: BALLO P MACKO P HARMATHA L MUDRON J
Citation: P. Ballo et al., THERMOELECTRICAL PARAMETERS OF FAST-NEUTRON IRRADIATED GESI ALLOYS, Physica status solidi. a, Applied research, 150(2), 1995, pp. 687-693

Authors: STUCHLIKOVA L HARMATHA L NAGL V GAZI M
Citation: L. Stuchlikova et al., DETERMINATION OF DEEP-LEVEL PARAMETERS BY ISOTHERMAL DEEP-LEVEL TRANSIENT SPECTROSCOPY WITH OPTICAL-EXCITATION, Physica status solidi. a, Applied research, 138(1), 1993, pp. 241-248

Authors: THURZO I PINCIK E HARMATHA L
Citation: I. Thurzo et al., TRANSIENT CHARGING OF MIS DIODES PREPARED BY AL OVERLAYER INDUCED PLASMA OXIDATION OF INP, Semiconductor science and technology, 7(3), 1992, pp. 418-422
Risultati: 1-6 |