Authors:
THURZO I
GMUCOVA K
CSABAY O
HARMATHA L
BURGHARDT H
BEYER R
Citation: I. Thurzo et al., AN EXPERIMENTAL-STUDY OF SIOXNY SI INTERFACES PREPARED BY RAPID THERMAL-PROCESSING - EVIDENCE FOR 2 GROUPS OF INTERFACE STATES/, Physica status solidi. a, Applied research, 151(2), 1995, pp. 345-353
Citation: P. Ballo et al., THERMOELECTRICAL PARAMETERS OF FAST-NEUTRON IRRADIATED GESI ALLOYS, Physica status solidi. a, Applied research, 150(2), 1995, pp. 687-693
Citation: L. Stuchlikova et al., DETERMINATION OF DEEP-LEVEL PARAMETERS BY ISOTHERMAL DEEP-LEVEL TRANSIENT SPECTROSCOPY WITH OPTICAL-EXCITATION, Physica status solidi. a, Applied research, 138(1), 1993, pp. 241-248
Citation: I. Thurzo et al., TRANSIENT CHARGING OF MIS DIODES PREPARED BY AL OVERLAYER INDUCED PLASMA OXIDATION OF INP, Semiconductor science and technology, 7(3), 1992, pp. 418-422