ACNP - Italian Periodicals Catalogue

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Results: 1-9 |

Results: 9

NONLITHOGRAPHIC NANOWIRE-ARRAY TUNNEL DEVICE - FABRICATION, ZERO-BIASANOMALIES, AND COULOMB-BLOCKADE

Authors: DAVYDOV DN HARUYAMA J ROUTKEVITCH D STATT BW ELLIS D MOSKOVITS M XU JM

Citation: Dn. Davydov et al., NONLITHOGRAPHIC NANOWIRE-ARRAY TUNNEL DEVICE - FABRICATION, ZERO-BIASANOMALIES, AND COULOMB-BLOCKADE, Physical review. B, Condensed matter, 57(21), 1998, pp. 13550-13553

COULOMB-BLOCKADE IN NANO-JUNCTION ARRAY FABRICATED BY NONLITHOGRAPHICMETHOD

Authors: HARUYAMA J DAVYDOV DN ROUTKEVITCH D ELLIS D STATT BW MOSKOVITS M XU JM

Citation: J. Haruyama et al., COULOMB-BLOCKADE IN NANO-JUNCTION ARRAY FABRICATED BY NONLITHOGRAPHICMETHOD, Solid-state electronics, 42(7-8), 1998, pp. 1257-1266

Authors: HARUYAMA J NEGISHI H NISHIMURA Y NASHIMOTO Y

Citation: J. Haruyama et al., SUBSTRATE-RELATED KINK EFFECTS WITH A STRONG LIGHT-SENSITIVITY IN ALGAAS INGAAS PHEMT/, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 25-33

NONLITHOGRAPHIC NANO-WIRE ARRAYS - FABRICATION, PHYSICS, AND DEVICE APPLICATIONS

Authors: ROUTKEVITCH D TAGER AA HARUYAMA J ALMAWLAWI D MOSKOVITS M XU JM

Citation: D. Routkevitch et al., NONLITHOGRAPHIC NANO-WIRE ARRAYS - FABRICATION, PHYSICS, AND DEVICE APPLICATIONS, I.E.E.E. transactions on electron devices, 43(10), 1996, pp. 1646-1658

GATE PULSE FREQUENCY-DEPENDENT KINK EFFECTS IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS WITH A LOW-TEMPERATURE-GROWN BUFFER LAYER

Authors: HARUYAMA J NEGISHI H

Citation: J. Haruyama et H. Negishi, GATE PULSE FREQUENCY-DEPENDENT KINK EFFECTS IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS WITH A LOW-TEMPERATURE-GROWN BUFFER LAYER, Journal of applied physics, 78(11), 1995, pp. 6839-6845

IMPACT IONIZATION IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH A LIGHTLY DOPED DRAIN STRUCTURE AND AN AL0.2GA0.8AS GAAS HETEROBUFFER LAYER/

Authors: HARUYAMA J KATANO H

Citation: J. Haruyama et H. Katano, IMPACT IONIZATION IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH A LIGHTLY DOPED DRAIN STRUCTURE AND AN AL0.2GA0.8AS GAAS HETEROBUFFER LAYER/, Journal of applied physics, 77(8), 1995, pp. 3913-3918

Authors: HARUYAMA J OHNO Y KATANO H NASHIMOTO Y

Citation: J. Haruyama et al., KINK EFFECT RELATED TO THE SELF-SIDE-GATING EFFECT IN GAAS-MESFETS, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1873-1875

THERMAL HISTORY OF COMETS DURING RESIDENCE IN THE OORT CLOUD - EFFECTOF RADIOGENIC HEATING IN COMBINATION WITH THE VERY-LOW THERMAL-CONDUCTIVITY OF AMORPHOUS ICE

Authors: HARUYAMA J YAMAMOTO T MIZUTANI H GREENBERG JM

Citation: J. Haruyama et al., THERMAL HISTORY OF COMETS DURING RESIDENCE IN THE OORT CLOUD - EFFECTOF RADIOGENIC HEATING IN COMBINATION WITH THE VERY-LOW THERMAL-CONDUCTIVITY OF AMORPHOUS ICE, J GEO R-PLA, 98(E8), 1993, pp. 15079-15090

PHOTOEMISSIONS RELATED TO THE KINK EFFECT IN GAAS METAL-SEMICONDUCTORFIELD-EFFECT TRANSISTORS WITH AN AL0.2GA0.8AS GAAS BUFFER LAYER/

Authors: HARUYAMA J GOTO N NASHIMOTO Y

Citation: J. Haruyama et al., PHOTOEMISSIONS RELATED TO THE KINK EFFECT IN GAAS METAL-SEMICONDUCTORFIELD-EFFECT TRANSISTORS WITH AN AL0.2GA0.8AS GAAS BUFFER LAYER/, Applied physics letters, 63(5), 1993, pp. 648-650

Risultati: 1-9 |