Authors:
HARUYAMA J
DAVYDOV DN
ROUTKEVITCH D
ELLIS D
STATT BW
MOSKOVITS M
XU JM
Citation: J. Haruyama et al., COULOMB-BLOCKADE IN NANO-JUNCTION ARRAY FABRICATED BY NONLITHOGRAPHICMETHOD, Solid-state electronics, 42(7-8), 1998, pp. 1257-1266
Authors:
HARUYAMA J
NEGISHI H
NISHIMURA Y
NASHIMOTO Y
Citation: J. Haruyama et al., SUBSTRATE-RELATED KINK EFFECTS WITH A STRONG LIGHT-SENSITIVITY IN ALGAAS INGAAS PHEMT/, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 25-33
Authors:
ROUTKEVITCH D
TAGER AA
HARUYAMA J
ALMAWLAWI D
MOSKOVITS M
XU JM
Citation: D. Routkevitch et al., NONLITHOGRAPHIC NANO-WIRE ARRAYS - FABRICATION, PHYSICS, AND DEVICE APPLICATIONS, I.E.E.E. transactions on electron devices, 43(10), 1996, pp. 1646-1658
Citation: J. Haruyama et H. Negishi, GATE PULSE FREQUENCY-DEPENDENT KINK EFFECTS IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS WITH A LOW-TEMPERATURE-GROWN BUFFER LAYER, Journal of applied physics, 78(11), 1995, pp. 6839-6845
Citation: J. Haruyama et H. Katano, IMPACT IONIZATION IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH A LIGHTLY DOPED DRAIN STRUCTURE AND AN AL0.2GA0.8AS GAAS HETEROBUFFER LAYER/, Journal of applied physics, 77(8), 1995, pp. 3913-3918
Citation: J. Haruyama et al., KINK EFFECT RELATED TO THE SELF-SIDE-GATING EFFECT IN GAAS-MESFETS, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1873-1875
Authors:
HARUYAMA J
YAMAMOTO T
MIZUTANI H
GREENBERG JM
Citation: J. Haruyama et al., THERMAL HISTORY OF COMETS DURING RESIDENCE IN THE OORT CLOUD - EFFECTOF RADIOGENIC HEATING IN COMBINATION WITH THE VERY-LOW THERMAL-CONDUCTIVITY OF AMORPHOUS ICE, J GEO R-PLA, 98(E8), 1993, pp. 15079-15090
Citation: J. Haruyama et al., PHOTOEMISSIONS RELATED TO THE KINK EFFECT IN GAAS METAL-SEMICONDUCTORFIELD-EFFECT TRANSISTORS WITH AN AL0.2GA0.8AS GAAS BUFFER LAYER/, Applied physics letters, 63(5), 1993, pp. 648-650