Authors: LETRON B HASHIM MDR ASHBURN P MOUIS M CHANTRE A VINCENT G

Citation: B. Letron et al., DETERMINATION OF BANDGAP NARROWING AND PARASITIC ENERGY BARRIERS IN SIGE HBTS INTEGRATED IN A BIPOLAR TECHNOLOGY, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 715-722

Authors: HASHIM MDR LEVER RF ASHBURN P PARKER GJ

Citation: Mdr. Hashim et al., EFFECT OF TRANSISTOR GEOMETRY ON THE ELECTRICAL CHARACTERISTICS OF SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS AT LOW-TEMPERATURES, Journal de physique. IV, 6(C3), 1996, pp. 119-124

Authors: ASHBURN P BOUSSETTA H HASHIM MDR CHANTRE A MOUIS M PARKER GJ VINCENT G

Citation: P. Ashburn et al., ELECTRICAL DETERMINATION OF BANDGAP NARROWING IN BIPOLAR-TRANSISTORS WITH EPITAXIAL SI, EPITAXIAL SI1-XGEX, AND ION-IMPLANTED BASES, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 774-783