Authors: HASNAT K YEAP CF JALLEPALLI S HARELAND SA SHIH WK AGOSTINELLI VM TASCH AF MAZIAR CM

Citation: K. Hasnat et al., THERMIONIC EMISSION MODEL OF ELECTRON GATE CURRENT IN SUBMICRON NMOSFETS, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 129-138

Authors: HASNAT K YEAP CF JALLEPALLI S SHIH WK HARELAND SA AGOSTINELI VM TASCH AF MAZIAR CM

Citation: K. Hasnat et al., A PSEUDO-LUCKY ELECTRON MODEL FOR SIMULATION OF ELECTRON GATE CURRENTIN SUBMICRON NMOSFETS, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1264-1273

Authors: HARELAND SA KRISHNAMURTHY S JALLEPALLI S YEAP CF HASNAT K TASCH AF MAZIAR CM

Citation: Sa. Hareland et al., A COMPUTATIONALLY EFFICIENT MODEL FOR INVERSION LAYER QUANTIZATION EFFECTS IN DEEP-SUBMICRON N-CHANNEL MOSFETS, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 90-96

Authors: HASNAT K MURTAZA S TASCH AF

Citation: K. Hasnat et al., A MANUFACTURING SENSITIVITY ANALYSIS OF 0.35 MU-M LDD MOSFETS, IEEE transactions on semiconductor manufacturing, 7(1), 1994, pp. 53-59

Authors: AGOSTINELLI VM HASNAT K BORDELON TJ LEMERSAL DB TASCH AF MAZIAR CM

Citation: Vm. Agostinelli et al., SENSITIVITY ISSUES IN MODELING THE SUBSTRATE CURRENT FOR SUBMICRON N-CHANNEL AND P-CHANNEL MOSFETS, Solid-state electronics, 37(9), 1994, pp. 1627-1632

Authors: AGOSTINELLI VM BORDELON TJ WANG XL HASNAT K YEAP CF LEMERSAL DB TASCH A MAZIAR CM

Citation: Vm. Agostinelli et al., 2-DIMENSIONAL ENERGY-DEPENDENT MODELS FOR THE SIMULATION OF SUBSTRATECURRENT IN SUBMICRON MOSFETS, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1784-1795