A PSEUDO-LUCKY ELECTRON MODEL FOR SIMULATION OF ELECTRON GATE CURRENTIN SUBMICRON NMOSFETS

An energy parameterized pseudo-lucky electron model for simulation of gate current in submicron MOSFET's is presented in this paper, The mod el uses hydrodynamic equations to describe more correctly the carrier energy dependence of the gate injection phenomenon, The proposed model is based on the exponential form of the conventional lucky electron g ate current model, Unlike the conventional lucky electron model, which is based on the local electric fields in the device, the proposed mod el accounts for nonlocal effects resulting from the large variations i n the electric field in submicron MOSFET's, This is achieved by formul ating the lucky electron model in terms of an effective-electric field , that is obtained by using the computed average carrier energy in the device and the energy versus field relation obtained from uniform-fie ld Monte Carlo simulations. Good agreement with gate currents over a w ide range of bias conditions for three sets of devices is demonstrated .