Citation: S. Hatatani et al., MOMBE GROWTH OF INGAP ON (100) AND (411)A GAAS SUBSTRATES USING TERTIARYBUTYLPHOSPHINE (TBP), Journal of crystal growth, 188(1-4), 1998, pp. 17-20
Authors:
HATATANI S
GUO LQ
OH JH
GRAHN HT
KONAGAI M
Citation: S. Hatatani et al., HEAVILY CARBON-DOPED GAAS GROWN ON VARIOUS ORIENTED GAAS SUBSTRATES BY MOMBE, Journal of crystal growth, 170(1-4), 1997, pp. 297-300