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Results: 3
SURFACE NITRIDATION OF SILICON DIOXIDE WITH A HIGH-DENSITY NITROGEN PLASMA
Authors: KRAFT R SCHNEIDER TP DOSTALIK WW HATTANGADY S
Citation: R. Kraft et al., SURFACE NITRIDATION OF SILICON DIOXIDE WITH A HIGH-DENSITY NITROGEN PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 967-970
INTEGRATED PROCESSING OF STACKED-GATE HETEROSTRUCTURES - PLASMA-ASSISTED LOW-TEMPERATURE PROCESSING COMBINED WITH RAPID THERMAL HIGH-TEMPERATURE PROCESSING
Authors: MISRA V HATTANGADY S XU XL WATKINS MJ HORNUNG B LUCOVSKY G WORTMAN JJ EMMERICHS U MEYER C LEO K KURZ H
Citation: V. Misra et al., INTEGRATED PROCESSING OF STACKED-GATE HETEROSTRUCTURES - PLASMA-ASSISTED LOW-TEMPERATURE PROCESSING COMBINED WITH RAPID THERMAL HIGH-TEMPERATURE PROCESSING, Microelectronic engineering, 25(2-4), 1994, pp. 209-214
LOW-TEMPERATURE PLASMA-ASSISTED OXIDATION OF SI - A NEW APPROACH FOR CREATION OF DEVICE-QUALITY SI-SIO2 INTERFACES WITH DEPOSITED DIELECTRICS FOR APPLICATIONS IN SI MOSFET TECHNOLOGIES
Authors: LUCOVSKY G YASUDA T MA Y HATTANGADY S MISRA V XU XL HORNUNG B WORTMAN JJ
Citation: G. Lucovsky et al., LOW-TEMPERATURE PLASMA-ASSISTED OXIDATION OF SI - A NEW APPROACH FOR CREATION OF DEVICE-QUALITY SI-SIO2 INTERFACES WITH DEPOSITED DIELECTRICS FOR APPLICATIONS IN SI MOSFET TECHNOLOGIES, Journal of non-crystalline solids, 179, 1994, pp. 354-366
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