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Citation: Zq. Fang et al., ELECTRON-IRRADIATION-INDUCED DEEP-LEVEL IN N-TYPE GAN, Applied physics letters, 72(4), 1998, pp. 448-449

Authors: LOOK DC FANG ZQ HEMSKY JW KENGKAN P

Citation: Dc. Look et al., IDENTIFICATION OF ELECTRON-IRRADIATION DEFECTS IN SEMIINSULATING GAASBY NORMALIZED THERMALLY STIMULATED CURRENT MEASUREMENTS, Physical review. B, Condensed matter, 55(4), 1997, pp. 2214-2218

Authors: LOOK DC REYNOLDS DC HEMSKY JW SIZELOVE JR JONES RL MOLNAR RJ

Citation: Dc. Look et al., DEFECT DONOR AND ACCEPTOR IN GAN, Physical review letters, 79(12), 1997, pp. 2273-2276

Authors: KREYE WC HEMSKY JW ANDREWS ML

Citation: Wc. Kreye et al., A SIMPLE NUMERICAL-METHOD FOR A MODIFIED ABEL INVERSION IN WHICH THE DENSITY CAN BE APPROXIMATED BY ELLIPTIC SYMMETRY, Journal of physics. D, Applied physics, 26(11), 1993, pp. 1836-1842

Authors: LINDSAY SM HEMSKY JW LOOK DC

Citation: Sm. Lindsay et al., ELECTRON-BEAM MODIFICATION OF GAAS SURFACE-POTENTIAL - MEASUREMENT OFRICHARDSON CONSTANT, Journal of applied physics, 74(3), 1993, pp. 1890-1893