AAAAAA

   
Results: 1-20 |
Results: 20
REAL-TIME MONITORING OF THE ETCHING OF GAAS(100) BY SURFACE PHOTOABSORPTION
Authors: FANG HB ENG J SU CC VEMURI S HERMAN IP BENT BE
Citation: Hb. Fang et al., REAL-TIME MONITORING OF THE ETCHING OF GAAS(100) BY SURFACE PHOTOABSORPTION, Langmuir, 14(6), 1998, pp. 1375-1378
LASER-INDUCED THERMAL-DESORPTION ANALYSIS OF THE SURFACE DURING GE ETCHING IN A CL-2 INDUCTIVELY-COUPLED PLASMA
Authors: CHOE JY HERMAN IP DONNELLY VM
Citation: Jy. Choe et al., LASER-INDUCED THERMAL-DESORPTION ANALYSIS OF THE SURFACE DURING GE ETCHING IN A CL-2 INDUCTIVELY-COUPLED PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3266-3273
ANALYSIS OF THE ETCHING OF SILICON IN AN INDUCTIVELY-COUPLED CHLORINEPLASMA USING LASER THERMAL-DESORPTION
Authors: CHOE JY HERMAN IP DONNELLY VM
Citation: Jy. Choe et al., ANALYSIS OF THE ETCHING OF SILICON IN AN INDUCTIVELY-COUPLED CHLORINEPLASMA USING LASER THERMAL-DESORPTION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 3024-3031
USE OF SURFACE PHOTOABSORPTION TO ANALYZE THE OPTICAL-RESPONSE OF GAAS(001) SURFACES
Authors: ERYIGIT R MARSCHEL PK HERMAN IP
Citation: R. Eryigit et al., USE OF SURFACE PHOTOABSORPTION TO ANALYZE THE OPTICAL-RESPONSE OF GAAS(001) SURFACES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(1), 1997, pp. 138-144
OPTICAL ANISOTROPY OF THE GAAS(001) SURFACE
Authors: ERYIGIT R HERMAN IP
Citation: R. Eryigit et Ip. Herman, OPTICAL ANISOTROPY OF THE GAAS(001) SURFACE, Physical review. B, Condensed matter, 56(15), 1997, pp. 9263-9266
ISOELECTRONIC BOUND-EXCITON PHOTOLUMINESCENCE IN STRAINED BERYLLIUM-DOPED SI0.92GE0.08 EPILAYERS AND SI0.92GE0.08 SI SUPERLATTICES AT AMBIENT AND ELEVATED HYDROSTATIC-PRESSURE/
Authors: KIM S CHANG GL HERMAN IP BEVK J MOORE KL HALL DG
Citation: S. Kim et al., ISOELECTRONIC BOUND-EXCITON PHOTOLUMINESCENCE IN STRAINED BERYLLIUM-DOPED SI0.92GE0.08 EPILAYERS AND SI0.92GE0.08 SI SUPERLATTICES AT AMBIENT AND ELEVATED HYDROSTATIC-PRESSURE/, Physical review. B, Condensed matter, 55(11), 1997, pp. 7130-7140
PATTERN TRANSFER AND PHOTOLUMINESCENCE DAMAGE ASSESSMENT OF DEEP-SUBMICROMETER FEATURES ETCHED BY PHOTON-INDUCED CRYOETCHING
Authors: FREILER MB SHIH MC KIM S LEVY M HERMAN IP SCARMOZZINO R OSGOOD RM
Citation: Mb. Freiler et al., PATTERN TRANSFER AND PHOTOLUMINESCENCE DAMAGE ASSESSMENT OF DEEP-SUBMICROMETER FEATURES ETCHED BY PHOTON-INDUCED CRYOETCHING, Applied physics A: Materials science & processing, 63(2), 1996, pp. 143-151
HYDROSTATIC-PRESSURE DEPENDENCE OF ISOELECTRONIC BOUND EXCITONS IN BERYLLIUM-DOPED SILICON
Authors: KIM S HERMAN IP MOORE KL HALL DG BEVK J
Citation: S. Kim et al., HYDROSTATIC-PRESSURE DEPENDENCE OF ISOELECTRONIC BOUND EXCITONS IN BERYLLIUM-DOPED SILICON, Physical review. B, Condensed matter, 53(8), 1996, pp. 4434-4442
LATTICE PROPERTIES OF STRAINED GAAS, SI, AND GE USING A MODIFIED BOND-CHARGE MODEL
Authors: ERYIGIT R HERMAN IP
Citation: R. Eryigit et Ip. Herman, LATTICE PROPERTIES OF STRAINED GAAS, SI, AND GE USING A MODIFIED BOND-CHARGE MODEL, Physical review. B, Condensed matter, 53(12), 1996, pp. 7775-7784
SURFACE-CHEMISTRY DURING PLASMA-ETCHING OF SILICON
Authors: DONNELLY VM HERMAN IP CHENG CC GUINN KV
Citation: Vm. Donnelly et al., SURFACE-CHEMISTRY DURING PLASMA-ETCHING OF SILICON, Pure and applied chemistry, 68(5), 1996, pp. 1071-1074
REAL-TIME OPTICAL THERMOMETRY DURING SEMICONDUCTOR PROCESSING (REPRINTED FROM OPTICAL-DIAGNOSTICS-FOR-THIN-FILM-PROCESSING, 1996)
Authors: HERMAN IP
Citation: Ip. Herman, REAL-TIME OPTICAL THERMOMETRY DURING SEMICONDUCTOR PROCESSING (REPRINTED FROM OPTICAL-DIAGNOSTICS-FOR-THIN-FILM-PROCESSING, 1996), IEEE journal of selected topics in quantum electronics, 1(4), 1995, pp. 1047-1053
COMPETITIVE HALOGENATION OF SILICON SURFACES IN HBR CL-2 PLASMAS STUDIED RAY PHOTOELECTRON-SPECTROSCOPY AND IN-SITU, REAL-TIME, PULSED LASER-INDUCED THERMAL-DESORPTION/
Authors: CHENG CC GUINN KV HERMAN IP DONNELLY VM
Citation: Cc. Cheng et al., COMPETITIVE HALOGENATION OF SILICON SURFACES IN HBR CL-2 PLASMAS STUDIED RAY PHOTOELECTRON-SPECTROSCOPY AND IN-SITU, REAL-TIME, PULSED LASER-INDUCED THERMAL-DESORPTION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(4), 1995, pp. 1970-1976
USE OF HYDROSTATIC-PRESSURE TO RESOLVE PHONON REPLICALIKE FEATURES INTHE PHOTOLUMINESCENCE SPECTRUM OF BERYLLIUM-DOPED SILICON
Authors: KIM S HERMAN IP MOORE KL HALL DG BEVK J
Citation: S. Kim et al., USE OF HYDROSTATIC-PRESSURE TO RESOLVE PHONON REPLICALIKE FEATURES INTHE PHOTOLUMINESCENCE SPECTRUM OF BERYLLIUM-DOPED SILICON, Physical review. B, Condensed matter, 52(23), 1995, pp. 16309-16312
PHOTOLUMINESCENCE FROM WURTZITE GAN UNDER HYDROSTATIC-PRESSURE
Authors: KIM SS HERMAN IP TUCHMAN JA DOVERSPIKE K ROWLAND LB GASKILL DK
Citation: Ss. Kim et al., PHOTOLUMINESCENCE FROM WURTZITE GAN UNDER HYDROSTATIC-PRESSURE, Applied physics letters, 67(3), 1995, pp. 380-382
LUMINESCENCE PROPERTIES OF SUBMICRON FEATURES FABRICATED BY USING MAGNETRON REACTIVE ION ETCHING WITH DIFFERENT SAMPLE BIASES
Authors: FREILER M MCLANE GF KIM S LEVY M SCARMOZZINO R HERMAN IP OSGOOD RM
Citation: M. Freiler et al., LUMINESCENCE PROPERTIES OF SUBMICRON FEATURES FABRICATED BY USING MAGNETRON REACTIVE ION ETCHING WITH DIFFERENT SAMPLE BIASES, Applied physics letters, 67(26), 1995, pp. 3883-3885
IN-SITU PULSED LASER-INDUCED THERMAL-DESORPTION STUDIES OF THE SILICON CHLORIDE SURFACE-LAYER DURING SILICON ETCHING IN HIGH-DENSITY PLASMAS OF CL2 AND CL2 O2 MIXTURES/
Authors: CHENG CC GUINN KV DONNELLY VM HERMAN IP
Citation: Cc. Cheng et al., IN-SITU PULSED LASER-INDUCED THERMAL-DESORPTION STUDIES OF THE SILICON CHLORIDE SURFACE-LAYER DURING SILICON ETCHING IN HIGH-DENSITY PLASMAS OF CL2 AND CL2 O2 MIXTURES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(5), 1994, pp. 2630-2640
LASER-INDUCED THERMAL-DESORPTION AS AN IN-SITU SURFACE PROBE DURING PLASMA PROCESSING
Authors: HERMAN IP DONNELLY VM GUINN KV CHENG CC
Citation: Ip. Herman et al., LASER-INDUCED THERMAL-DESORPTION AS AN IN-SITU SURFACE PROBE DURING PLASMA PROCESSING, Physical review letters, 72(17), 1994, pp. 2801-2804
EFFECT OF STRAIN ON PHONONS IN SI, GE, AND SI GE HETEROSTRUCTURES/
Authors: SUI ZF HERMAN IP
Citation: Zf. Sui et Ip. Herman, EFFECT OF STRAIN ON PHONONS IN SI, GE, AND SI GE HETEROSTRUCTURES/, Physical review. B, Condensed matter, 48(24), 1993, pp. 17938-17953
TEMPERATURE-DEPENDENCE OF RAMAN-SCATTERING IN GE1-XSIX ALLOYS
Authors: BURKE HH HERMAN IP
Citation: Hh. Burke et Ip. Herman, TEMPERATURE-DEPENDENCE OF RAMAN-SCATTERING IN GE1-XSIX ALLOYS, Physical review. B, Condensed matter, 48(20), 1993, pp. 15016-15024
PHOTOLUMINESCENCE OF ZNSE ZNMNSE SUPERLATTICES UNDER HYDROSTATIC-PRESSURE
Authors: TUCHMAN JA SUI ZF KIM SS HERMAN IP
Citation: Ja. Tuchman et al., PHOTOLUMINESCENCE OF ZNSE ZNMNSE SUPERLATTICES UNDER HYDROSTATIC-PRESSURE, Journal of applied physics, 73(11), 1993, pp. 7730-7738
Risultati: 1-20 |