Citation: F. Herzel, AN ANALYTICAL MODEL FOR THE POWER SPECTRAL DENSITY OF A VOLTAGE-CONTROLLED OSCILLATOR AND ITS ANALOGY TO THE LASER LINEWIDTH THEORY, IEEE transactions on circuits and systems. 1, Fundamental theory andapplications, 45(9), 1998, pp. 904-908
Authors:
HERZEL F
SCHLEY P
HEINEMANN B
ZILLMANN U
KNOLL D
TEMMLER D
ERBEN U
Citation: F. Herzel et al., EXPERIMENTAL-VERIFICATION AND NUMERICAL APPLICATION OF THE THERMODYNAMIC APPROACH TO HIGH-FREQUENCY NOISE IN SIGE HBTS, Solid-state electronics, 41(3), 1997, pp. 387-390
Authors:
KRUGER D
KURPS R
HEINEMANN B
HERZEL F
ZEINDL HP
Citation: D. Kruger et al., SECONDARY-ION MASS-SPECTROSCOPY ULTRASHALLOW DEPTH PROFILING FOR SI SI1-XGEX/SI HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 287-293
Citation: F. Herzel et B. Heinemann, HIGH-FREQUENCY NOISE-ANALYSIS OF SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS/, International journal of electronics, 81(1), 1996, pp. 37-48
Citation: U. Zillmann et F. Herzel, AN IMPROVED SPICE MODEL FOR HIGH-FREQUENCY NOISE OF BJTS AND HBTS, IEEE journal of solid-state circuits, 31(9), 1996, pp. 1344-1346
Authors:
HERZEL F
EHWALD KE
HEINEMANN B
KRUGER D
KURPS R
ROPKE W
ZEINDL HP
Citation: F. Herzel et al., DECONVOLUTION OF NARROW BORON SIMS DEPTH PROFILES IN SI AND SIGE, Surface and interface analysis, 23(11), 1995, pp. 764-770
Citation: B. Heinemann et al., INFLUENCE OF LOW DOPED EMITTER AND COLLECTOR REGIONS ON HIGH-FREQUENCY PERFORMANCE OF SIGE-BASE HBTS, Solid-state electronics, 38(6), 1995, pp. 1183-1189
Citation: F. Herzel et B. Heinemann, HIGH-FREQUENCY NOISE OF BIPOLAR-DEVICES IN CONSIDERATION OF CARRIER HEATING AND LOW-TEMPERATURE EFFECTS, Solid-state electronics, 38(11), 1995, pp. 1905-1909
Citation: F. Herzel et al., THE SEMICONDUCTOR-LASER LINEWIDTH - A GREENS-FUNCTION APPROACH, IEEE journal of quantum electronics, 29(12), 1993, pp. 2891-2897