Authors: HARTFORD CL HILLARD RJ MAZUR RG FOAD MA

Citation: Cl. Hartford et al., HIGH-RESOLUTION DAMAGE DEPTH PROFILES OF UNANNEALED SUB-100 NM B+ IMPLANTS IN (100) SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 316-319

Authors: HILLARD RJ SHERBONDY JC HARTFORD CL WEINZIERL SR MAUR RG

Citation: Rj. Hillard et al., EVALUATION OF DIAMOND-GROUND BEVELED SURFACES WITH HG GATE CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 411-414

Authors: HEDDLESON JM WEINZIERL SR HILLARD RJ RAICHOUDHURY P MAZUR RG

Citation: Jm. Heddleson et al., PROFILING OF SILICIDE SILICON STRUCTURES USING A COMBINATION OF THE SPREADING RESISTANCE AND POINT-CONTACT CURRENT-VOLTAGE METHODS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 317-321

Authors: WEINZIERL SR HILLARD RJ HEDDLESON JM RAICHOUDHURY P MAZUR RG OSBURN CM

Citation: Sr. Weinzierl et al., DETECTION OF ANOMALOUS DEFECT-ENHANCED DIFFUSION USING ADVANCED SPREADING RESISTANCE MEASUREMENTS AND ANALYSIS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 322-326

Authors: LEDUDAL R HILLARD RJ HEDDLESON JM WEINZIERL SR RAICHOUDHURY P MAZUR RG

Citation: R. Ledudal et al., ACCURATE PROFILING OF ULTRA-SHALLOW IMPLANTS WITH MERCURY GATE METAL-OXIDE-SEMICONDUCTOR CAPACITANCE-VOLTAGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 336-341