DETECTION OF ANOMALOUS DEFECT-ENHANCED DIFFUSION USING ADVANCED SPREADING RESISTANCE MEASUREMENTS AND ANALYSIS

Citation
Sr. Weinzierl et al., DETECTION OF ANOMALOUS DEFECT-ENHANCED DIFFUSION USING ADVANCED SPREADING RESISTANCE MEASUREMENTS AND ANALYSIS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 322-326
Citations number
13
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
12
Issue
1
Year of publication
1994
Pages
322 - 326
Database
ISI
SICI code
1071-1023(1994)12:1<322:DOADDU>2.0.ZU;2-Z
Abstract
Advanced spreading resistance measurements and analysis techniques are used to determine the dopant profiles in two ultra-shallow silicon me tal-oxide-semiconductor source/drain structures which were germanium p reamorphized prior to implant. Although the two structures differ only slightly in their anneal temperature and time, there is a significant difference in the metallurgical junction depths of the implants. It i s proposed that the difference in junction depths is related to defect -enhanced transient diffusion.