Sr. Weinzierl et al., DETECTION OF ANOMALOUS DEFECT-ENHANCED DIFFUSION USING ADVANCED SPREADING RESISTANCE MEASUREMENTS AND ANALYSIS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 322-326
Advanced spreading resistance measurements and analysis techniques are
used to determine the dopant profiles in two ultra-shallow silicon me
tal-oxide-semiconductor source/drain structures which were germanium p
reamorphized prior to implant. Although the two structures differ only
slightly in their anneal temperature and time, there is a significant
difference in the metallurgical junction depths of the implants. It i
s proposed that the difference in junction depths is related to defect
-enhanced transient diffusion.