DETECTION OF ANOMALOUS DEFECT-ENHANCED DIFFUSION USING ADVANCED SPREADING RESISTANCE MEASUREMENTS AND ANALYSIS

Advanced spreading resistance measurements and analysis techniques are used to determine the dopant profiles in two ultra-shallow silicon me tal-oxide-semiconductor source/drain structures which were germanium p reamorphized prior to implant. Although the two structures differ only slightly in their anneal temperature and time, there is a significant difference in the metallurgical junction depths of the implants. It i s proposed that the difference in junction depths is related to defect -enhanced transient diffusion.