Citation: M. Hohnisch et al., RELAXATION OF COMPOSITIONALLY GRADED SI1-XGEX BUFFERS - A TEM STUDY, Journal of crystal growth, 157(1-4), 1995, pp. 126-131
Authors:
LI JH
HOLY V
BAUER G
HOHNISCH M
HERZOG HJ
SCHAFFLER F
Citation: Jh. Li et al., STRAIN RELAXATION AND MISFIT DISLOCATIONS IN COMPOSITIONALLY GRADED SI1-XGEX LAYERS ON SI(001), Journal of crystal growth, 157(1-4), 1995, pp. 137-141
Authors:
LI JH
KOPPENSTEINER E
BAUER G
HOHNISCH M
HERZOG HJ
SCHAFFLER F
Citation: Jh. Li et al., EVOLUTION OF STRAIN RELAXATION IN COMPOSITIONALLY GRADED SI1-XGEX FILMS ON SI(001), Applied physics letters, 67(2), 1995, pp. 223-225