STRAIN RELAXATION AND MISFIT DISLOCATIONS IN COMPOSITIONALLY GRADED SI1-XGEX LAYERS ON SI(001)

Authors
LI JH HOLY V BAUER G HOHNISCH M HERZOG HJ SCHAFFLER F
Citation
Jh. Li et al., STRAIN RELAXATION AND MISFIT DISLOCATIONS IN COMPOSITIONALLY GRADED SI1-XGEX LAYERS ON SI(001), Journal of crystal growth, 157(1-4), 1995, pp. 137-141
Citations number
11
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
157
Issue
1-4
Year of publication
1995
Pages
137 - 141
Database
ISI
SICI code
0022-0248(1995)157:1-4<137:SRAMDI>2.0.ZU;2-K
Abstract
Strain relaxation behavior of molecular beam epitaxy grown composition ally graded Si1-xGex epilayers on Si(001) at 750 degrees C has been in vestigated by using a high-resolution X-ray reciprocal space mapping t echnique. The depth profiles of the residual strain and the density of misfit dislocations of the samples were determined and a comparison w ith a theoretical model [J. Tersoff, Appl. Phys. Lett. 62 (1993) 693] is presented.