Authors: IZUNOME K SHIRAI H KASHIMA K YOSHIKAWA J HOJO A

Citation: K. Izunome et al., THE EFFECT OF HYDROGEN ANNEALING ON OXYGEN PRECIPITATION BEHAVIOR ANDGATE OXIDE INTEGRITY IN CZOCHRALSKI SI WAFERS, Journal of the Electrochemical Society, 144(10), 1997, pp. 3695-3695

Authors: ZHONG L HOJO A MATSUSHITA Y AIBA Y HAYASHI K TAKEDA R SHIRAI H SAITO H MATSUSHITA J YOSHIKAWA J

Citation: L. Zhong et al., A NOVEL CONFIGURATION OF ATOMIC STEPS OBSERVED ON VICINAL SILICON(100) SURFACE ANNEALED IN A HYDROGEN ATMOSPHERE, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 73(5), 1996, pp. 1249-1260

Authors: ZHONG L HOJO A MATSUSHITA Y AIBA Y HAYASHI K TAKEDA R SHIRAI H SAITO H MATSUSHITA J YOSHIKAWA J

Citation: L. Zhong et al., EVIDENCE OF SPONTANEOUS FORMATION OF STEPS ON SILICON(100), Physical review. B, Condensed matter, 54(4), 1996, pp. 2304-2307

Authors: ZHONG L HOJO A AIBA Y CHAKI K YOSHIKAWA J HAYASHI K

Citation: L. Zhong et al., ATOMIC STEPS ON A SILICON(001) SURFACE TILTED TOWARD AN ARBITRARY DIRECTION, Applied physics letters, 68(13), 1996, pp. 1823-1825

Authors: IZUNOME K SHIRAI H KASHIMA K YOSHIKAWA J HOJO A

Citation: K. Izunome et al., OXYGEN PRECIPITATION IN CZOCHRALSKI-GROWN SILICON-WAFERS DURING HYDROGEN ANNEALING, Applied physics letters, 68(1), 1996, pp. 49-50