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Results: 1-22 |
Results: 22

Authors: GOLDEN WE HOPKINS RH SANCHEZ NP
Citation: We. Golden et al., ANTENATAL CORTICOSTEROIDS FOR THE PREVENTION OF NEONATAL RESPIRATORY-DISTRESS IN A PREDOMINANTLY RURAL STATE MEDICAID POPULATION, Obstetrics and gynecology, 92(5), 1998, pp. 837-841

Authors: SINGH NB NARAYANAN R ZHAO AX BALAKRISHNA V HOPKINS RH SUHRE DR FERNELIUS NC HOPKINS FK ZELMON DE
Citation: Nb. Singh et al., BRIDGMAN GROWTH OF GASE CRYSTALS FOR NONLINEAR-OPTICAL APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 49(3), 1997, pp. 243-246

Authors: AUGUSTINE G HOBGOOD HM BALAKRISHNA V DUNNE G HOPKINS RH
Citation: G. Augustine et al., PHYSICAL VAPOR TRANSPORT GROWTH AND PROPERTIES OF SIC MONOCRYSTALS OF4H POLYTYPE, Physica status solidi. b, Basic research, 202(1), 1997, pp. 137-148

Authors: GIOCONDI J ROHRER GS SKOWRONSKI M BALAKRISHNA V AUGUSTINE G HOBGOOD HM HOPKINS RH
Citation: J. Giocondi et al., AN ATOMIC-FORCE MICROSCOPY STUDY OF SUPER-DISLOCATION MICROPIPE COMPLEXES ON THE 6H-SIC(0001) GROWTH SURFACE/, Journal of crystal growth, 181(4), 1997, pp. 351-362

Authors: SRIRAM S AUGUSTINE G BURK AA GLASS RC HOBGOOD HM ORPHANOS PA ROWLAND LB SMITH TJ BRANDT CD DRIVER MC HOPKINS RH
Citation: S. Sriram et al., 4H-SIC MESFETS WITH 42 GHZ F(MAX), IEEE electron device letters, 17(7), 1996, pp. 369-371

Authors: SINHAROY S AUGUSTINE G ROWLAND LB AGARWAL AK MESSHAM RL DRIVER MC HOPKINS RH
Citation: S. Sinharoy et al., MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF GAN AND ALXGA1-XN ON 6H-SIC, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 896-899

Authors: SUDARSHAN TS GRADINARU G KORONY G MITCHEL W HOPKINS RH
Citation: Ts. Sudarshan et al., HIGH-FIELD ACTIVATION OF MICROPIPES IN HIGH-RESISTIVITY SILICON-CARBIDE, Journal of electronic materials, 25(5), 1996, pp. 893-898

Authors: JENNY JR SKOWRONSKI M MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH
Citation: Jr. Jenny et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF BORON IMPURITIES IN SILICON-CARBIDE GROWN BY PHYSICAL VAPOR TRANSPORT, Journal of applied physics, 79(5), 1996, pp. 2326-2331

Authors: JENNY JR SKOWRONSKI J MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH
Citation: Jr. Jenny et al., DEEP-LEVEL TRANSIENT SPECTROSCOPIC AND HALL-EFFECT INVESTIGATION OF THE POSITION OF THE VANADIUM ACCEPTOR LEVEL IN 4H AND 6H SIC, Applied physics letters, 68(14), 1996, pp. 1963-1965

Authors: JENNY JR SKOWRONSKI M MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH
Citation: Jr. Jenny et al., ON THE COMPENSATION MECHANISM IN HIGH-RESISTIVITY 6H-SIC DOPED WITH VANADIUM, Journal of applied physics, 78(6), 1995, pp. 3839-3842

Authors: JENNY JR SKOWRONSKI M MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH
Citation: Jr. Jenny et al., VANADIUM RELATED NEAR-BAND-EDGE ABSORPTION-BANDS IN 3 SIC POLYTYPES, Journal of applied physics, 78(5), 1995, pp. 3160-3163

Authors: QIAN W SKOWRONSKI M AUGUSTINE G GLASS RC HOBGOOD HM HOPKINS RH
Citation: W. Qian et al., CHARACTERIZATION OF POLISHING-RELATED SURFACE DAMAGE IN (0001) SILICON-CARBIDE SUBSTRATES, Journal of the Electrochemical Society, 142(12), 1995, pp. 4290-4294

Authors: SUDARSHAN TS GRADINARU G KORONY G MITCHEL W HOPKINS RH
Citation: Ts. Sudarshan et al., HIGH-FIELD EFFECTS IN HIGH-RESISTIVITY SILICON-CARBIDE IN LATERAL CONFIGURATIONS, Applied physics letters, 67(23), 1995, pp. 3435-3437

Authors: HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH JENNY J SKOWRONSKI M MITCHEL WC ROTH M
Citation: Hm. Hobgood et al., SEMIINSULATING 6H-SIC GROWN BY PHYSICAL VAPOR TRANSPORT, Applied physics letters, 66(11), 1995, pp. 1364-1366

Authors: OLIVE JR HOFMEISTER WH BAYUZICK RJ CARRO G MCHUGH JP HOPKINS RH VLASSE M WEBER JKR NORDINE PC MCELFRESH M
Citation: Jr. Olive et al., FORMATION OF TETRAGONAL YBA2CU3O7-DELTA FROM AN UNDERCOOLED MELT, Journal of materials research, 9(1), 1994, pp. 1-3

Authors: HOPKINS RH
Citation: Rh. Hopkins, ANCHORAGE WINDSTORM OF 1 DECEMBER 1992, Weather and forecasting, 9(4), 1994, pp. 469-478

Authors: SRIRAM S CLARKE RC BURK AA HOBGOOD HM MCMULLIN PG ORPHANOS PA SIERGIEJ RR SMITH TJ BRANDT CD DRIVER MC HOPKINS RH
Citation: S. Sriram et al., RF PERFORMANCE OF SIC MESFETS ON HIGH-RESISTIVITY SUBSTRATES, IEEE electron device letters, 15(11), 1994, pp. 458-459

Authors: HENNINGSEN T SINGH NB HOPKINS RH MAZELSKY R HOPKINS FK FRAZIER DO SINGH OP
Citation: T. Henningsen et al., GROWTH OF BINARY ORGANIC NLO CRYSTALS - M-NA P-NA AND M-NA CNA SYSTEMS, Materials letters, 20(3-4), 1994, pp. 203-209

Authors: GOTTLIEB M SINGH NB HOPKINS RH MAZELSKY R
Citation: M. Gottlieb et al., NONCOLLINEAR ACOUSTOOPTIC TUNABLE FILTER - THALLIUM PHOSPHORUS SELENIDE SYSTEM, Optical engineering, 33(8), 1994, pp. 2503-2508

Authors: HOBGOOD HM BARRETT DL MCHUGH JP CLARKE RC SRIRAM S BURK AA GREGGI J BRANDT CD HOPKINS RH CHOYKE WJ
Citation: Hm. Hobgood et al., LARGE-DIAMETER 6H-SIC FOR MICROWAVE DEVICE APPLICATIONS, Journal of crystal growth, 137(1-2), 1994, pp. 181-186

Authors: SINGH NB GOTTLIEB M HOPKINS RH MAZELSKY R DUVAL WMB GLICKSMAN ME
Citation: Nb. Singh et al., PHYSICAL VAPOR TRANSPORT GROWTH OF MERCUROUS CHLORIDE CRYSTALS, Progress in crystal growth and characterization of materials, 27(3-4), 1993, pp. 201-231

Authors: HOBGOOD HM HENNINGSEN T THOMAS RN HOPKINS RH OHMER MC MITCHEL WC FISCHER DW HEGDE SM HOPKINS FK
Citation: Hm. Hobgood et al., ZNGEP2 GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI METHOD, Journal of applied physics, 73(8), 1993, pp. 4030-4037
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