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IMPLANT ISOLATION OF INGAAS GAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITYTRANSISTOR STRUCTURE USING BORON/
Authors:
TENG SJJ WU CS HOU LD WANG DC
Citation:
Sjj. Teng et al., IMPLANT ISOLATION OF INGAAS GAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITYTRANSISTOR STRUCTURE USING BORON/, Electronics Letters, 30(18), 1994, pp. 1539-1540
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