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Results:
1-15
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Results: 15
Authors:
NISHIKAWA H
TANAKA T
YANASE Y
HOURAI M
SANO M
TSUYA H
Citation: H. Nishikawa et al., FORMATION OF GROWN-IN DEFECTS DURING CZOCHRALSKI SILICON CRYSTAL-GROWTH, JPN J A P 1, 36(11), 1997, pp. 6595-6600
Authors:
KANDA T
HOURAI M
TOMOKAGE H
Citation: T. Kanda et al., INVESTIGATION OF GROWN-IN DEFECT FORMATION IN CZOCHRALSKI SILICON-CRYSTALS BY OPTICAL PRECIPITATE PROFILER, JPN J A P 2, 36(6B), 1997, pp. 731-733
Authors:
UMENO S
OKUI M
HOURAI M
SANO M
TSUYA H
Citation: S. Umeno et al., RELATIONSHIP BETWEEN GROWN-IN DEFECTS IN CZOCHRALSKI SILICON-CRYSTALS, JPN J A P 2, 36(5B), 1997, pp. 591-594
Authors:
ONO T
ASAYAMA E
HORIE H
HOURAI M
SANO M
TSUYA R
NAKAI K
Citation: T. Ono et al., BEHAVIOR OF DEFECTS IN HEAVILY BORON-DOPED CZOCHRALSKI SILICON, JPN J A P 2, 36(3A), 1997, pp. 249-252
Authors:
MARSDEN K
KANDA T
OKUI M
HOURAI M
SHIGEMATSU T
Citation: K. Marsden et al., DETERMINATION OF THE CRITERIA FOR NUCLEATION OF RING-OSF FROM SMALL AS-GROWN OXYGEN PRECIPITATES IN CZ-SI CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 16-21
Authors:
MIYANO T
INAMI S
SHINTANI A
KANDA T
HOURAI M
Citation: T. Miyano et al., DYNAMICAL BEHAVIOR OF CZOCHRALSKI MELTS AND ITS INFLUENCE ON CRYSTAL-GROWTH, Journal of crystal growth, 166(1-4), 1996, pp. 469-475
Authors:
KANDA T
HOURAI M
MIKI S
SHIGEMATSU T
TOMOKAGE H
MIYANO T
MORITA H
SHINTANI A
Citation: T. Kanda et al., INFLUENCE OF MELT-TEMPERATURE FLUCTUATIONS ON STRIATION FORMATION IN LARGE-SCALE CZOCHRALSKI SI GROWTH SYSTEMS, Journal of crystal growth, 166(1-4), 1996, pp. 663-668
Authors:
MIYAZAKI M
MIYAZAKI S
KITAMURA T
AOKI T
NAKASHIMA Y
HOURAI M
SHIGEMATSU T
Citation: M. Miyazaki et al., INFLUENCE OF FE CONTAMINATION IN CZOCHRALSKI-GROWN SILICON SINGLE-CRYSTALS ON LSI-YIELD RELATED CRYSTAL QUALITY CHARACTERISTICS, JPN J A P 1, 34(2A), 1995, pp. 409-413
Authors:
MIYANO T
SHINTANI A
KANDA T
HOURAI M
Citation: T. Miyano et al., INTERFACE FLUCTUATIONS IN CZOCHRALSKI CRYSTAL-GROWTH, Journal of applied physics, 78(5), 1995, pp. 2985-2995
FORMATION BEHAVIOR OF INFRARED LIGHT-SCATTERING DEFECTS IN SILICON DURING CZOCHRALSKI CRYSTAL-GROWTH
Authors:
HOURAI M
NAGASHIMA T
KAJITA E
MIKI S
SHIGEMATSU T
OKUI M
Citation: M. Hourai et al., FORMATION BEHAVIOR OF INFRARED LIGHT-SCATTERING DEFECTS IN SILICON DURING CZOCHRALSKI CRYSTAL-GROWTH, Journal of the Electrochemical Society, 142(9), 1995, pp. 3193-3201
Authors:
SHINTANI A
MIYANO T
HOURAI M
Citation: A. Shintani et al., A NOVEL-APPROACH TO THE CHARACTERIZATION OF GROWTH STRIATIONS IN CZOCHRALSKI SILICON-CRYSTALS, Journal of the Electrochemical Society, 142(7), 1995, pp. 2463-2469
Authors:
MARSDEN K
SADAMITSU S
HOURAI M
SUMITA S
SHIGEMATSU T
Citation: K. Marsden et al., OBSERVATION OF RING-OSF NUCLEI IN CZ-SI USING SHORT-TIME ANNEALING AND INFRARED LIGHT-SCATTERING TOMOGRAPHY, Journal of the Electrochemical Society, 142(3), 1995, pp. 996-1001
Authors:
MIYANO T
MORITA H
SHINTANI A
KANDA T
HOURAI M
Citation: T. Miyano et al., CHARACTERIZATION OF COMPLEXITIES IN CZOCHRALSKI CRYSTAL-GROWTH BY NONLINEAR FORECASTING, Journal of applied physics, 76(5), 1994, pp. 2681-2693
Authors:
SADAMITSU S
UMENO S
KOIKE Y
HOURAI M
SUMITA S
SHIGEMATSU T
Citation: S. Sadamitsu et al., DEPENDENCE OF THE GROWN-IN DEFECT DISTRIBUTION ON GROWTH-RATES IN CZOCHRALSKI SILICON, JPN J A P 1, 32(9A), 1993, pp. 3675-3681
Authors:
UMENO S
SADAMITSU S
MURAKAMI H
HOURAI M
SUMITA S
SHIGEMATSU T
Citation: S. Umeno et al., AXIAL MICROSCOPIC DISTRIBUTION OF GROWN-IN DEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS, JPN J A P 2, 32(5B), 1993, pp. 120000699-120000702
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