Citation: Pc. Hoyle et al., ELECTRON-BEAM-INDUCED DEPOSITION FROM W(CO)(6) AT 2 TO 20 KEV AND ITSAPPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 662-673
Authors:
WANG D
HOYLE PC
CLEAVER JRA
PORKOLAB GA
MACDONALD NC
Citation: D. Wang et al., LITHOGRAPHY USING ELECTRON-BEAM-INDUCED ETCHING OF A CARBON-FILM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 1984-1987
Citation: Pc. Hoyle et al., FABRICATION OF FREESTANDING MICROTRANSDUCERS IN GAAS WITH AN ELECTRON-BEAM-INDUCED OXIDE MASK AND CL-2 ETCHING, Sensors and actuators. A, Physical, 50(1-2), 1995, pp. 31-37
Citation: Pc. Hoyle et al., ELECTRICAL-RESISTANCE OF ELECTRON-BEAM-INDUCED DEPOSITS FROM TUNGSTENHEXACARBONYL, Applied physics letters, 62(23), 1993, pp. 3043-3045