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Results: 1-5 |
Results: 5

Authors: HOYLE PC CLEAVER JRA AHMED H
Citation: Pc. Hoyle et al., ELECTRON-BEAM-INDUCED DEPOSITION FROM W(CO)(6) AT 2 TO 20 KEV AND ITSAPPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 662-673

Authors: WANG D HOYLE PC CLEAVER JRA PORKOLAB GA MACDONALD NC
Citation: D. Wang et al., LITHOGRAPHY USING ELECTRON-BEAM-INDUCED ETCHING OF A CARBON-FILM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 1984-1987

Authors: HOYLE PC CLEAVER JRA AHMED H
Citation: Pc. Hoyle et al., FABRICATION OF FREESTANDING MICROTRANSDUCERS IN GAAS WITH AN ELECTRON-BEAM-INDUCED OXIDE MASK AND CL-2 ETCHING, Sensors and actuators. A, Physical, 50(1-2), 1995, pp. 31-37

Authors: HOYLE PC CLEAVER JRA AHMED H
Citation: Pc. Hoyle et al., ULTRALOW-ENERGY FOCUSED ELECTRON-BEAM-INDUCED DEPOSITION, Applied physics letters, 64(11), 1994, pp. 1448-1450

Authors: HOYLE PC OGASAWARA M CLEAVER JRA AHMED H
Citation: Pc. Hoyle et al., ELECTRICAL-RESISTANCE OF ELECTRON-BEAM-INDUCED DEPOSITS FROM TUNGSTENHEXACARBONYL, Applied physics letters, 62(23), 1993, pp. 3043-3045
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