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Results:
1-16
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Results: 16
Authors:
HOYT JL
MITCHELL TO
RIM K
SINGH DV
GIBBONS JF
Citation: Jl. Hoyt et al., COMPARISON OF SI SI1-X-YGEXCY AND SI/SI1-YCY HETEROJUNCTIONS GROWN BYRAPID THERMAL CHEMICAL-VAPOR-DEPOSITION/, Thin solid films, 321, 1998, pp. 41-46
Authors:
TAKAGI S
HOYT JL
RIM K
WELSER JJ
GIBBONS JF
Citation: S. Takagi et al., EVALUATION OF THE VALENCE-BAND DISCONTINUITY OF SI SI1-XGEX/SI HETEROSTRUCTURES BY APPLICATION OF ADMITTANCE SPECTROSCOPY TO MOS CAPACITORS/, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 494-501
Authors:
RIM K
MITCHELL TO
SINGH DV
HOYT JL
GIBBONS JF
FOUNTAIN G
Citation: K. Rim et al., METAL-OXIDE-SEMICONDUCTOR CAPACITANCE-VOLTAGE CHARACTERISTICS AND BAND OFFSETS FOR SI1-YCY SI HETEROSTRUCTURES/, Applied physics letters, 72(18), 1998, pp. 2286-2288
Authors:
MITCHELL TO
HOYT JL
GIBBONS JF
Citation: To. Mitchell et al., SUBSTITUTIONAL CARBON INCORPORATION IN EPITAXIAL SI1-YCY LAYERS GROWNBY CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 71(12), 1997, pp. 1688-1690
Authors:
FUKUDA H
HOYT JL
MCCORD MA
PEASE RFW
Citation: H. Fukuda et al., FABRICATION OF SILICON NANOPILLARS CONTAINING POLYCRYSTALLINE SILICONINSULATOR MULTILAYER STRUCTURES/, Applied physics letters, 70(3), 1997, pp. 333-335
Authors:
TAKAGI SI
HOYT JL
WELSER JJ
GIBBONS JF
Citation: Si. Takagi et al., COMPARATIVE-STUDY OF PHONON-LIMITED MOBILITY OF 2-DIMENSIONAL ELECTRONS IN STRAINED AND UNSTRAINED SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of applied physics, 80(3), 1996, pp. 1567-1577
Authors:
GHANI T
HOYT JL
MCCARTHY AM
GIBBONS JF
Citation: T. Ghani et al., CONTROL OF IMPLANT-DAMAGE-ENHANCED BORON-DIFFUSION IN EPITAXIALLY GROWN N-SI P-SI1-XGEX/N-SI HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of electronic materials, 24(8), 1995, pp. 999-1002
Authors:
KUO P
HOYT JL
GIBBONS JF
TURNER JE
LEFFORGE D
Citation: P. Kuo et al., EFFECTS OF SI THERMAL-OXIDATION ON B DIFFUSION IN SI AND STRAINED SI1-XGEX LAYERS, Applied physics letters, 67(5), 1995, pp. 706-708
Authors:
KUO P
HOYT JL
GIBBONS JF
TURNER JE
LEFFORGE D
Citation: P. Kuo et al., EFFECTS OF STRAIN ON BORON-DIFFUSION IN SI AND SI1-XGEX, Applied physics letters, 66(5), 1995, pp. 580-582
Authors:
KUO P
HOYT JL
GIBBONS JF
TURNER JE
LEFFORGE D
Citation: P. Kuo et al., EFFECTS OF STRAIN ON BORON-DIFFUSION IN SI AND SI1-XGEX (VOL 66, PG 580, 1995), Applied physics letters, 66(10), 1995, pp. 1293-1293
Authors:
WELSER J
HOYT JL
GIBBONS JF
Citation: J. Welser et al., GROWTH AND PROCESSING OF RELAXED-SI1-XGEX STRAINED-SI STRUCTURES FOR METAL-OXIDE-SEMICONDUCTOR APPLICATIONS, JPN J A P 1, 33(4B), 1994, pp. 2419-2422
Authors:
WELSER J
HOYT JL
GIBBONS JF
Citation: J. Welser et al., ELECTRON-MOBILITY ENHANCEMENT IN STRAINED-SI N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, IEEE electron device letters, 15(3), 1994, pp. 100-102
Authors:
EMERSON RM
HOYT JL
GIBBONS JF
Citation: Rm. Emerson et al., APPLICATION OF LIMITED REACTION PROCESSING TO ATOMIC LAYER EPITAXY - GROWTH OF CADMIUM TELLURIDE USING DIISOPROPYL TELLURIDE AND DIMETHYL CADMIUM, Applied physics letters, 65(9), 1994, pp. 1103-1105
Authors:
ANGELL MJ
EMERSON RM
HOYT JL
GIBBONS JF
EYRES LA
BORTZ ML
FEJER MM
Citation: Mj. Angell et al., GROWTH OF ALTERNATING (100) (111)-ORIENTED II-VI REGIONS FOR QUASI-PHASE-MATCHED NONLINEAR-OPTICAL DEVICES ON GAAS SUBSTRATES/, Applied physics letters, 64(23), 1994, pp. 3107-3109
Authors:
WELSER J
HOYT JL
GIBBONS JF
Citation: J. Welser et al., IIA-4 TEMPERATURE AND SCALING BEHAVIOR OF STRAINED-SI N-MOSFETS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2101-2101
Authors:
KAMINS TI
NAUKA K
JACOWITZ RD
HOYT JL
NOBLE DB
GIBBONS JF
Citation: Ti. Kamins et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF DIODES FABRICATED IN THICK, SELECTIVELY DEPOSITED SI SI1-XGEX EPITAXIAL LAYERS/, IEEE electron device letters, 13(4), 1992, pp. 177-179
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1-16
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