IIA-4 TEMPERATURE AND SCALING BEHAVIOR OF STRAINED-SI N-MOSFETS

Authors
WELSER J HOYT JL GIBBONS JF
Citation
J. Welser et al., IIA-4 TEMPERATURE AND SCALING BEHAVIOR OF STRAINED-SI N-MOSFETS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2101-2101
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
11
Year of publication
1993
Pages
2101 - 2101
Database
ISI
SICI code
0018-9383(1993)40:11<2101:ITASBO>2.0.ZU;2-#