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Results: 1-25/78
Authors:
YI SI
MITCHELL WJ
CHUNG CH
HU EL
WEINBERG WH
Citation: Si. Yi et al., MULTILAYER OXIDATION OF ALAS BY THERMAL AND ELECTRON-BEAM-INDUCED DECOMPOSITION OF H2O IN ULTRAHIGH-VACUUM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2199-2203
Authors:
LI YL
WONG GCL
SAFINYA CR
CAINE E
HU EL
HAEFFNER D
FERNANDEZ P
YUN WB
Citation: Yl. Li et al., BRAGG-FRESNEL OPTICS FOR HARD X-RAY MICROSCOPY - DEVELOPMENT OF FABRICATION PROCESS AND X-RAY CHARACTERIZATION AT THE ADVANCED PHOTON SOURCE, Review of scientific instruments, 69(8), 1998, pp. 2844-2848
Authors:
MARGALIT NM
BLACK KA
CHIU YJ
HEGBLOM ER
STREUBEL K
ABRAHAM P
ANZLOWAR M
BOWERS JE
HU EL
Citation: Nm. Margalit et al., TOP-EMITTING DOUBLE-FUSED 1.5-MU-M VERTICAL-CAVITY LASERS, Electronics Letters, 34(3), 1998, pp. 285-287
Authors:
BLACK KA
ABRAHAM P
MARGALIT NM
HEGBLOM ER
CHIU YJ
PIPREK J
BOWERS JE
HU EL
Citation: Ka. Black et al., DOUBLE-FUSED 1.5-MU-M VERTICAL-CAVITY LASERS WITH RECORD HIGH T-O OF 132K AT ROOM-TEMPERATURE, Electronics Letters, 34(20), 1998, pp. 1947-1949
Authors:
CHEN CH
KELLER S
PARISH G
VETURY R
KOZODOY P
HU EL
DENBAARS SP
MISHRA UK
WU YF
Citation: Ch. Chen et al., HIGH-TRANSCONDUCTANCE SELF-ALIGNED ALGAN GAN MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH REGROWN OHMIC CONTACTS/, Applied physics letters, 73(21), 1998, pp. 3147-3149
Authors:
SCHOENFELD WV
CHEN CH
PETROFF PM
HU EL
Citation: Wv. Schoenfeld et al., ARGON ION DAMAGE IN SELF-ASSEMBLED QUANTUM DOTS STRUCTURES, Applied physics letters, 73(20), 1998, pp. 2935-2937
Authors:
MINSKY MS
FLEISCHER SB
ABARE AC
BOWERS JE
HU EL
KELLER S
DENBAARS SP
Citation: Ms. Minsky et al., CHARACTERIZATION OF HIGH-QUALITY INGAN GAN MULTIQUANTUM WELLS WITH TIME-RESOLVED PHOTOLUMINESCENCE/, Applied physics letters, 72(9), 1998, pp. 1066-1068
Authors:
CROWELL PA
YOUNG DK
KELLER S
HU EL
AWSCHALOM DD
Citation: Pa. Crowell et al., NEAR-FIELD SCANNING OPTICAL SPECTROSCOPY OF AN INGAN QUANTUM-WELL, Applied physics letters, 72(8), 1998, pp. 927-929
Authors:
BLACK A
HAWKINS AR
MARGALIT NM
BABIC DI
HOLMES AL
CHANG YL
ABRAHAM P
BOWERS JE
HU EL
Citation: A. Black et al., WAFER FUSION - MATERIALS ISSUES AND DEVICE RESULTS, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 943-951
Authors:
MARGALIT NM
PIPREK J
ZHANG S
BABIC DI
STREUBEL K
MIRIN RP
WESSELMANN JR
BOWERS JE
HU EL
Citation: Nm. Margalit et al., 64-DEGREES-C CONTINUOUS-WAVE OPERATION OF 1.5-MU-M VERTICAL-CAVITY LASER, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 359-365
Authors:
SCHRAMM JE
BABIC DI
HU EL
BOWERS JE
MERZ JL
Citation: Je. Schramm et al., FABRICATION OF HIGH-ASPECT-RATIO INP-BASED VERTICAL-CAVITY LASER MIRRORS USING CH4 H-2/O-2/AR REACTIVE ION ETCHING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2031-2036
Authors:
CHEN CH
CHIU YJ
HU EL
Citation: Ch. Chen et al., CHARACTERIZATION OF THE RADIATION-ENHANCED DIFFUSION OF DRY-ETCH DAMAGE IN N-GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2648-2651
Authors:
YU DG
CHEN CH
HOLMES AL
DENBAARS SP
HU EL
Citation: Dg. Yu et al., ROLE OF DEFECT DIFFUSION IN THE INP DAMAGE PROFILE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2672-2675
Authors:
MITCHELL WJ
CHUNG CH
YI SI
HU EL
Citation: Wj. Mitchell et al., WET OXIDATION OF ALAS FILMS UNDER ULTRAHIGH-VACUUM CONDITIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1182-1186
Authors:
HU EL
CHEN CH
Citation: El. Hu et Ch. Chen, DRY ETCH DAMAGE IN III-V SEMICONDUCTORS, Microelectronic engineering, 35(1-4), 1997, pp. 23-28
Authors:
YU DG
CHEN CH
HOLMES AL
HU EL
DENBAARS SP
Citation: Dg. Yu et al., COMPARING ION DAMAGE IN GAAS AND INP, Microelectronic engineering, 35(1-4), 1997, pp. 95-98
Authors:
CAINE EJ
SHI S
HU EL
LI Y
IDZIAK SHJ
SUBRAMANIAN G
SAFINYA CR
Citation: Ej. Caine et al., FABRICATION AND CHARACTERIZATION OF III-V COMPOUND SEMICONDUCTOR BRAGG-FRESNEL LENSES FOR HARD X-RAY MICROFOCUSING, Microelectronic engineering, 35(1-4), 1997, pp. 289-292
Authors:
STRZELECKA EM
ROBINSON GD
COLDREN LA
HU EL
Citation: Em. Strzelecka et al., FABRICATION OF REFRACTIVE MICROLENSES IN SEMICONDUCTORS BY MASK SHAPETRANSFER IN REACTIVE ION ETCHING, Microelectronic engineering, 35(1-4), 1997, pp. 385-388
Authors:
MITCHELL WJ
CHUNG CH
YI SI
HU EL
WEINBERG WH
Citation: Wj. Mitchell et al., OXIDATION OF ALAS FILMS UNDER ULTRAHIGH-VACUUM CONDITIONS - INTERACTION OF H2O AND O-2 WITH THE ALAS(001) SURFACE, Surface science, 384(1-3), 1997, pp. 81-93
Authors:
BABIC DI
PIPREK J
STREUBEL K
MIRIN RP
MARGALIT NM
MARS DE
BOWERS JE
HU EL
Citation: Di. Babic et al., DESIGN AND ANALYSIS OF DOUBLE-FUSED 1.55-MU-M VERTICAL-CAVITY LASERS, IEEE journal of quantum electronics, 33(8), 1997, pp. 1369-1383
Authors:
BABIC DI
DOHLER GH
BOWERS JE
HU EL
Citation: Di. Babic et al., ISOTYPE HETEROJUNCTIONS WITH FLAT VALENCE OR CONDUCTION-BAND, IEEE journal of quantum electronics, 33(12), 1997, pp. 2195-2198
Authors:
CHEN CH
IBBETSON JP
HU EL
MISHRA UK
Citation: Ch. Chen et al., ALGAAS GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR WITH A LOW-TEMPERATURE-GROWN GAAS ION DAMAGE BLOCKING LAYER/, Applied physics letters, 71(4), 1997, pp. 494-496
Authors:
SHI SS
HU EL
ZHANG JP
CHANG YI
PARIKH P
MISHRA U
Citation: Ss. Shi et al., PHOTOLUMINESCENCE STUDY OF HYDROGENATED ALUMINUM OXIDE-SEMICONDUCTOR INTERFACE, Applied physics letters, 70(10), 1997, pp. 1293-1295
Authors:
HU EL
CHEN CH
GREEN DL
Citation: El. Hu et al., LOW-ENERGY ION DAMAGE IN SEMICONDUCTORS - A PROGRESS REPORT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3632-3636
Authors:
YU DG
CHEN CH
KELLER BP
HOLMES AL
HU EL
DENBAARS SP
Citation: Dg. Yu et al., INVESTIGATION OF IMPROVED REGROWN MATERIAL ON INP SURFACES ETCHED WITH METHANE HYDROGEN/ARGON/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3674-3678