CHARACTERIZATION OF THE RADIATION-ENHANCED DIFFUSION OF DRY-ETCH DAMAGE IN N-GAAS

Radiation-enhanced diffusion of dry-etch damage observed from experime nts has been further characterized with Schottky diodes and deep level transient spectroscopy (DLTS) measurements. The use of DLTS spectra t o monitor the effects of changes in ion dose rate and the application of laser radiation shows that the ion-induced defects having high diff usivities during ion-assisted processes are basically associated with the components of primary point defects, such as interstitials and vac ancies. The properties of ion-induced traps obtained from DLTS measure ments may provide us with some information to refine our model on the low-energy ion-induced damage. (C) 1997 American Vacuum Society.