Authors:
MRSTIK BJ
MCMARR PJ
LAWRENCE RK
HUGHES HL
Citation: Bj. Mrstik et al., THE USE OF SPECTROSCOPIC ELLIPSOMETRY TO PREDICT THE RADIATION RESPONSE OF SIMOX, IEEE transactions on nuclear science, 41(6), 1994, pp. 2277-2283
Citation: Me. Zvanut et al., EFFECT OF SUPPLEMENTAL O-IMPLANTATION ON THE RADIATION-INDUCED HOLE TRAPS IN SIMOX BURIED OXIDES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2284-2290
Citation: Vv. Afanasev et al., DEEP AND SHALLOW ELECTRON TRAPPING IN THE BURIED OXIDE LAYER OF SIMOXSTRUCTURES, Journal of the Electrochemical Society, 141(10), 1994, pp. 2801-2804
Citation: Rj. Lambert et al., EFFECT OF AN AUGMENTED OXYGEN IMPLANT ON ELECTRON TRAPPING IN BURIED OXIDES, Applied physics letters, 64(24), 1994, pp. 3291-3292
Authors:
ZALESKI A
IOANNOU DE
CAMPISI GJ
HUGHES HL
Citation: A. Zaleski et al., SUCCESSIVE CHARGING DISCHARGING OF GATE OXIDES IN SOI MOSFETS BY SEQUENTIAL HOT-ELECTRON STRESSING OF FRONT BACK CHANNEL, IEEE electron device letters, 14(9), 1993, pp. 435-437
Authors:
ZALESKI A
IOANNOU DE
CAMPISI GJ
HUGHES HL
Citation: A. Zaleski et al., MECHANISMS OF HOT-CARRIER-INDUCED DEGRADATION OF SOI (SIMOX) MOSFETS, Microelectronic engineering, 22(1-4), 1993, pp. 403-406
Citation: Re. Stahlbush et al., REDUCTION OF CHARGE TRAPPING AND ELECTRON-TUNNELING IN SIMOX BY SUPPLEMENTAL IMPLANTATION OF OXYGEN, IEEE transactions on nuclear science, 40(6), 1993, pp. 1740-1747
Citation: Ag. Revesz et al., BULK ELECTRICAL-CONDUCTION IN THE BURIED OXIDE OF SIMOX STRUCTURES, Journal of the Electrochemical Society, 140(11), 1993, pp. 3222-3229