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Citation: Jw. Hutchins et al., OPTICAL INVESTIGATION OF STRAIN AND DEFECTS IN (100)CDTE GE/SI AND (100)ZNTE/GE/SI GROWN BY MOLECULAR-BEAM-EPITAXY/, Applied physics letters, 71(3), 1997, pp. 350-352

Authors: MORTON R DENG F LAU SS XIN S FURDYNA JK HUTCHINS JW SKROMME BJ MAYER JW

Citation: R. Morton et al., ION-BEAM MIXING IN ZNSE CDZNSE STRAINED-LAYER STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 704-708

Authors: HUTCHINS JW PARAMESHWARAN B SKROMME BJ SMITH DJ SIVANANTHAN S

Citation: Jw. Hutchins et al., OPTICAL CHARACTERIZATION OF ZNMNSSE QUATERNARY ALLOYS FOR VISIBLE-LIGHT EMITTING DEVICES, Journal of crystal growth, 159(1-4), 1996, pp. 50-53

Authors: TSEN SCY SMITH DJ HUTCHINS JW SKROMME BJ CHEN YP SIVANANTHAN S

Citation: Scy. Tsen et al., HETEROEPITAXIAL CDTE(111) GROWN BY MBE ON NOMINALLY FLAT AND MISORIENTED SI(001) SUBSTRATES - CHARACTERIZATION BY ELECTRON-MICROSCOPY AND OPTICAL METHODS, Journal of crystal growth, 159(1-4), 1996, pp. 58-63