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Results:
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Results: 3
Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN
Authors:
Haberer, ED Chen, CH Hansen, M Keller, S DenBaars, SP Mishra, UK Hu, EL
Citation:
Ed. Haberer et al., Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN, J VAC SCI B, 19(3), 2001, pp. 603-608
Channeling as a mechanism for dry etch damage in GaN
Authors:
Haberer, ED Chen, CH Abare, A Hansen, M Denbaars, S Coldren, L Mishra, U Hu, EL
Citation:
Ed. Haberer et al., Channeling as a mechanism for dry etch damage in GaN, APPL PHYS L, 76(26), 2000, pp. 3941-3943
Cl-2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors
Authors:
Chen, CH Keller, S Haberer, ED Zhang, LD DenBaars, SP Hu, EL Mishra, UK Wu, YF
Citation:
Ch. Chen et al., Cl-2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors, J VAC SCI B, 17(6), 1999, pp. 2755-2758
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