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Results:
1-15
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Results: 15
Authors:
Mayusumi, M
Imai, M
Nakahara, S
Inoue, K
Habuka, H
Citation: M. Mayusumi et al., Morphology of silicon oxide film on silicon wafer surface during its removal process in a hydrogen ambient, JPN J A P 1, 40(11), 2001, pp. 6556-6560
Authors:
Habuka, H
Citation: H. Habuka, Flatness deterioration of silicon epitaxial film formed using horizontal single-wafer epitaxial reactor, JPN J A P 1, 40(10), 2001, pp. 6041-6044
Authors:
Habuka, H
Citation: H. Habuka, Hot-wall and cold-wall environments for silicon epitaxial film growth, J CRYST GR, 223(1-2), 2001, pp. 145-155
Authors:
Habuka, H
Otsuka, T
Qu, WF
Shimada, M
Okuyama, K
Citation: H. Habuka et al., Model of boron incorporation into silicon epitaxial film in a B2H6-SiHCl3-H-2 system, J CRYST GR, 222(1-2), 2001, pp. 183-193
Authors:
Habuka, H
Shimada, M
Okuyama, K
Citation: H. Habuka et al., Adsorption and desorption rate of multicomponent organic species on silicon wafer surface, J ELCHEM SO, 148(7), 2001, pp. G365-G369
Authors:
Ishiwari, S
Kato, H
Habuka, H
Citation: S. Ishiwari et al., Development of evaluation method for organic contamination on silicon wafer surfaces, J ELCHEM SO, 148(11), 2001, pp. G644-G648
Authors:
Habuka, H
Maruyama, K
Suzuki, T
Citation: H. Habuka et al., Design of a rapid thermal processing system using a reflection-resolved ray tracing method, J ELCHEM SO, 148(10), 2001, pp. G543-G547
Authors:
Habuka, H
Shimada, M
Okuyama, K
Citation: H. Habuka et al., Numerical calculations of heat profile using circular infrared lamp heating furnace, KAG KOG RON, 26(6), 2000, pp. 785-791
Authors:
Habuka, H
Akiyama, S
Otsuka, T
Qu, WF
Citation: H. Habuka et al., Instability of diborane gas in silicon epitaxial film growth, J CRYST GR, 209(4), 2000, pp. 807-815
Authors:
Habuka, H
Shimada, M
Okuyama, K
Citation: H. Habuka et al., Rate theory of multicomponent adsorption of organic species on silicon wafer surface, J ELCHEM SO, 147(6), 2000, pp. 2319-2323
Authors:
Habuka, H
Shimada, M
Okuyama, K
Citation: H. Habuka et al., Thermal conditions in rapid thermal processing system using circular infrared lamp, J ELCHEM SO, 147(12), 2000, pp. 4660-4664
Authors:
Habuka, H
Otsuka, T
Qu, WF
Citation: H. Habuka et al., Dominant overall chemical reaction in a chlorine trifluoride-silicon-nitrogen system at atmospheric pressure, JPN J A P 1, 38(11), 1999, pp. 6466-6469
Authors:
Habuka, H
Aoyama, Y
Akiyama, S
Otsuka, T
Qu, WF
Shimada, M
Okuyama, K
Citation: H. Habuka et al., Chemical process of silicon epitaxial growth in a SiHCl3-H-2 system, J CRYST GR, 207(1-2), 1999, pp. 77-86
Authors:
Habuka, H
Otsuka, T
Mayusumi, M
Shimada, M
Okuyama, K
Citation: H. Habuka et al., A direct approach for evaluating the thermal condition of a silicon substrate under infrared rays and specular reflectors, J ELCHEM SO, 146(2), 1999, pp. 713-718
Authors:
Habuka, H
Otsuka, T
Citation: H. Habuka et T. Otsuka, Reaction of hydrogen fluoride gas at high temperatures with silicon oxide film and silicon surface, JPN J A P 1, 37(11), 1998, pp. 6123-6127
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1-15
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