Authors: Lin, CH Yang, K East, JR Haddad, GI Chow, DH Warren, LD Dunlap, HL Roth, JA Thomas, S

Citation: Ch. Lin et al., Ring oscillator using an RTD-HBT heterostructure, J KOR PHYS, 39(3), 2001, pp. 572-575

Authors: Vasko, FT Sun, JP Haddad, GI Mitin, VV

Citation: Ft. Vasko et al., Inhomogeneous broadening of intersubband transitions due to nonscreening roughness of heterointerfaces, J APPL PHYS, 87(7), 2000, pp. 3582-3584

Authors: Eisele, H Rydberg, A Haddad, GI

Citation: H. Eisele et al., Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above, IEEE MICR T, 48(4), 2000, pp. 626-631

Authors: Belenky, G Dutta, M Gorfinkel, VB Haddad, GI Iafrate, GJ Kim, KW Kisin, M Luryi, S Stroscio, MA Sun, JP Teng, HB Yu, SG

Citation: G. Belenky et al., Tailoring of optical phonon modes in nanoscale semiconductor structures: role of interface-optical phonons in quantum-well lasers, PHYSICA B, 263, 1999, pp. 462-465

Authors: Yang, KH Haddad, GI East, JR

Citation: Kh. Yang et al., High-efficiency class-A power amplifiers with a dual-bias-control scheme, IEEE MICR T, 47(8), 1999, pp. 1426-1432

Authors: Sawdai, D Yang, KH Hsu, SSH Pavlidis, D Haddad, GI

Citation: D. Sawdai et al., Power performance of InP-based single and double heterojunction bipolar transistors, IEEE MICR T, 47(8), 1999, pp. 1449-1456