Authors:
Hofmann, M
Wagner, A
Ellmers, C
Schlichenmeier, C
Schafer, S
Hohnsdorf, F
Koch, J
Stolz, W
Koch, SW
Ruhle, WW
Hader, J
Moloney, JV
O'Reilly, EP
Borchert, B
Egorov, AY
Riechert, H
Citation: M. Hofmann et al., Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-mu m-wavelength regime, APPL PHYS L, 78(20), 2001, pp. 3009-3011
Authors:
Hader, J
Koch, SW
Moloney, JV
O'Reilly, EP
Citation: J. Hader et al., Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers, APPL PHYS L, 76(25), 2000, pp. 3685-3687
Citation: Jv. Moloney et al., Modeling semiconductor amplifiers and lasers: from microscopic physics to device simulation, J OPT SOC B, 16(11), 1999, pp. 2023-2029
Citation: J. Hader et al., Microscopic theory of gain, absorption, and refractive index in semiconductor laser materials influence of conduction-band nonparabolicity and Coulomb-induced intersubband coupling, IEEE J Q EL, 35(12), 1999, pp. 1878-1886
Citation: J. Hader et al., Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers, APPL PHYS L, 74(16), 1999, pp. 2277-2279