AAAAAA

   
Results: 1-12 |
Results: 12
Formation of Ni-graphite intercalation compounds on SiC - art. no. 155401
Authors: Robbie, K Jemander, ST Lin, N Hallin, C Erlandsson, R Hansson, GV Madsen, LD
Citation: K. Robbie et al., Formation of Ni-graphite intercalation compounds on SiC - art. no. 155401, PHYS REV B, 6415(15), 2001, pp. 5401
Silicon vacancy related defect in 4H and 6H SiC
Authors: Sorman, E Son, NT Chen, WM Kordina, O Hallin, C Janzen, E
Citation: E. Sorman et al., Silicon vacancy related defect in 4H and 6H SiC, PHYS REV B, 61(4), 2000, pp. 2613-2620
Hole effective masses in 4H SiC
Authors: Son, NT Hai, PN Chen, WM Hallin, C Monemar, B Janzen, E
Citation: Nt. Son et al., Hole effective masses in 4H SiC, PHYS REV B, 61(16), 2000, pp. 10544-10546
Electronic structure of the neutral silicon vacancy in 4H and 6H SiC
Authors: Wagner, M Magnusson, B Chen, WM Janzen, E Sorman, E Hallin, C Lindstrom, JL
Citation: M. Wagner et al., Electronic structure of the neutral silicon vacancy in 4H and 6H SiC, PHYS REV B, 62(24), 2000, pp. 16555-16560
Computational modeling of SiC epitaxial growth in a hot wall reactor
Authors: Ji, W Lofgren, PM Hallin, C Gu, CY Zhou, G
Citation: W. Ji et al., Computational modeling of SiC epitaxial growth in a hot wall reactor, J CRYST GR, 220(4), 2000, pp. 560-571
Modeling of silicon carbide epitaxial growth in hot-wall chemical vapor deposition processes
Authors: Lofgren, PM Ji, W Hallin, C Gu, CY
Citation: Pm. Lofgren et al., Modeling of silicon carbide epitaxial growth in hot-wall chemical vapor deposition processes, J ELCHEM SO, 147(1), 2000, pp. 164-175
Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H-SiC Schottky diodes
Authors: Wahab, Q Ellison, A Henry, A Janzen, E Hallin, C Di Persio, J Martinez, R
Citation: Q. Wahab et al., Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H-SiC Schottky diodes, APPL PHYS L, 76(19), 2000, pp. 2725-2727
Purity and surface structure of thick 6H and 4H SiC layers grown by sublimation epitaxy
Authors: Syvajarvi, M Yakimova, R Johansson, EAM Henry, A Wahab, Q Hallin, C Janzen, E
Citation: M. Syvajarvi et al., Purity and surface structure of thick 6H and 4H SiC layers grown by sublimation epitaxy, MAT SCI E B, 61-2, 1999, pp. 147-150
SiC power devices for high voltage applications
Authors: Rottner, K Frischholz, M Myrtveit, T Mou, D Nordgren, K Henry, A Hallin, C Gustafsson, U Schoner, A
Citation: K. Rottner et al., SiC power devices for high voltage applications, MAT SCI E B, 61-2, 1999, pp. 330-338
Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SIC
Authors: Wagner, M Magnusson, B Sorman, E Hallin, C Lindstrom, JL Chen, WM Janzen, E
Citation: M. Wagner et al., Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SIC, PHYSICA B, 274, 1999, pp. 663-666
Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC
Authors: Son, NT Hai, PN Wagner, M Chen, WM Ellison, A Hallin, C Monemar, B Janzen, E
Citation: Nt. Son et al., Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC, SEMIC SCI T, 14(12), 1999, pp. 1141-1146
Phonon replicas at the M point in 4H-SiC: A theoretical and experimental study
Authors: Ivanov, IG Lindefelt, U Henry, A Kordina, O Hallin, C Aroyo, M Egilsson, T Janzen, E
Citation: Ig. Ivanov et al., Phonon replicas at the M point in 4H-SiC: A theoretical and experimental study, PHYS REV B, 58(20), 1998, pp. 13634-13647
Risultati: 1-12 |