Authors:
Ils, A
Cantoni, M
Sallese, JM
Fazan, P
Han, JP
Guo, X
Ma, TP
Citation: A. Ils et al., Transmission electron microscope investigation of SrBi2Ta2O9 memory capacitors on Si with silicon dioxide and silicon nitride as buffers, J VAC SCI B, 18(4), 2000, pp. 1915-1918