Authors: Lu, J Haworth, L Westwood, DI Macdonald, JE

Citation: J. Lu et al., Initial stages of molecular-beam epitaxy growth of GaN on 6H-SiC(0001), APPL PHYS L, 78(8), 2001, pp. 1080-1082

Authors: Haworth, L Lu, J Westwood, DI MacDonald, JE

Citation: L. Haworth et al., Atomic hydrogen cleaning, nitriding and annealing InSb (100), APPL SURF S, 166(1-4), 2000, pp. 253-258

Authors: Haworth, L Lu, J Westwood, DI Macdonald, JE

Citation: L. Haworth et al., Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100), APPL SURF S, 166(1-4), 2000, pp. 418-422

Authors: Lu, J Haworth, L Hill, P Westwood, DI Macdonald, JE

Citation: J. Lu et al., Nitridation of the GaAs(001) surface: Thermal behavior of the (3x3) reconstruction and its evolution, J VAC SCI B, 17(4), 1999, pp. 1659-1665

Authors: Lu, J Westwood, DI Haworth, L Hill, P Macdonald, JE

Citation: J. Lu et al., The (3 X 3) reconstruction and its evolution during the nitridation of GaAs(001), THIN SOL FI, 344, 1999, pp. 567-570