Authors: Heber, JD Gevaux, D Li, X Phillips, CC

Citation: Jd. Heber et al., Room temperature InAs/InAs1-xSbx single quantum well light emitting diodeswith barriers for improved carrier confinement, IEE P-OPTO, 147(6), 2000, pp. 407-411

Authors: Pullin, MJ Hardaway, HR Heber, JD Phillips, CC

Citation: Mj. Pullin et al., Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices, APPL PHYS L, 75(22), 1999, pp. 3437-3439

Authors: Pullin, MJ Hardaway, HR Heber, JD Phillips, CC Yuen, WT Stradling, RA Moeck, P

Citation: Mj. Pullin et al., Room-temperature InAsSb strained-layer superlattice light-emitting diodes at lambda = 4.2 mu m with AlSb barriers for improved carrier confinement, APPL PHYS L, 74(16), 1999, pp. 2384-2386