AAAAAA
Results:
1-9
|
Results: 9
Authors:
Hofgen, A
Heera, V
Mucklich, A
Eichhorn, F
Skorupa, W
Citation: A. Hofgen et al., Ion-beam-induced crystal grain nucleation in amorphous silicon carbide, NUCL INST B, 161, 2000, pp. 917-921
Authors:
Heera, V
Reuther, H
Stoemenos, J
Pecz, B
Citation: V. Heera et al., Phase formation due to high dose aluminum implantation into silicon carbide, J APPL PHYS, 87(1), 2000, pp. 78-85
Authors:
Heera, V
Fontaine, F
Skorupa, W
Pecz, B
Barna, A
Citation: V. Heera et al., Ion-beam synthesis of epitaxial silicon carbide in nitrogen-implanted diamond, APPL PHYS L, 77(2), 2000, pp. 226-228
Authors:
Heera, V
Skorupa, W
Pecz, B
Dobos, L
Citation: V. Heera et al., Ion beam synthesis of graphite and diamond in silicon carbide, APPL PHYS L, 76(20), 2000, pp. 2847-2849
Authors:
Hofgen, A
Heera, V
Eichhorn, F
Skorupa, W
Moller, W
Citation: A. Hofgen et al., Annealing and recrystallization of amorphous silicon carbide produced by ion implantation, MAT SCI E B, 61-2, 1999, pp. 353-357
Authors:
Heera, V
Stoemenos, J
Kogler, R
Voelskow, E
Skorupa, W
Citation: V. Heera et al., Crystallization and surface erosion of SiC by ion irradiation at 500 degrees C, MAT SCI E B, 61-2, 1999, pp. 358-362
Authors:
Heera, V
Stoemenos, J
Kogler, R
Voelskow, M
Skorupa, W
Citation: V. Heera et al., Crystallization and surface erosion of SiC by ion irradiation at elevated temperatures, J APPL PHYS, 85(3), 1999, pp. 1378-1386
Authors:
Stoemenos, J
Pecz, B
Heera, V
Citation: J. Stoemenos et al., Epitaxial aluminum carbide formation in 6H-SiC by high-dose Al+ implantation, APPL PHYS L, 74(18), 1999, pp. 2602-2604
Authors:
Hofgen, A
Heera, V
Eichhorn, F
Skorupa, W
Citation: A. Hofgen et al., Annealing and recrystallization of amorphous silicon carbide produced by ion implantation, J APPL PHYS, 84(9), 1998, pp. 4769-4774
Risultati:
1-9
|