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Results: 1-7 |
Results: 7

Authors: Hefner, AR Singh, R Lai, JS Berning, DW Bouche, S Chapuy, C
Citation: Ar. Hefner et al., SiC power diodes provide breakthrough performance for a wide range of applications, IEEE POW E, 16(2), 2001, pp. 273-280

Authors: Bayne, SB Portnoy, WM Hefner, AR
Citation: Sb. Bayne et al., MOS-gated thyristors (MCTs) for repetitive high power switching, IEEE POW E, 16(1), 2001, pp. 125-131

Authors: Richter, CA Hefner, AR Vogel, EM
Citation: Ca. Richter et al., A comparison of quantum-mechanical capacitance-voltage simulators, IEEE ELEC D, 22(1), 2001, pp. 35-37

Authors: Zhu, HB Lai, JS Hefner, AR Tang, YQ Chen, CC
Citation: Hb. Zhu et al., Modeling-based examination of conducted EMI emissions from hard- and soft-switching PWM inverters, IEEE IND AP, 37(5), 2001, pp. 1383-1393

Authors: Berning, DW Hefner, AR
Citation: Dw. Berning et Ar. Hefner, IGBT model validation for soft-switching applications, IEEE IND AP, 37(2), 2001, pp. 650-660

Authors: Shen, CC Hefner, AR Berning, DW Bernstein, JB
Citation: Cc. Shen et al., Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions, IEEE IND AP, 36(2), 2000, pp. 614-624

Authors: Zhu, HB Hefner, AR Lai, JS
Citation: Hb. Zhu et al., Characterization of power electronics system interconnect parasitics usingtime domain reflectometry, IEEE POW E, 14(4), 1999, pp. 622-628
Risultati: 1-7 |