Authors:
Heinsohn, JK
Dittmann, R
Contreras, JR
Scherbel, J
Klushin, A
Siegel, M
Citation: Jk. Heinsohn et al., Influence of La-doping of YBa2Cu3O7 on transport properties of interface-engineered ramp-edge junctions, IEEE APPL S, 11(1), 2001, pp. 795-798
Authors:
Heinsohn, JK
Dittmann, R
Contreras, JR
Goldobin, E
Klushin, AM
Siegel, M
Hagedorn, D
Popel, R
Dolata, R
Buchholz, FI
Niemeyer, J
Citation: Jk. Heinsohn et al., Effect of the magnetic-field orientation on the modulation period of the critical current of ramp-type Josephson junctions, J APPL PHYS, 90(9), 2001, pp. 4623-4631
Citation: Jk. Heinsohn et al., Effects of process parameters on the fabrication of edge-type YBCO Josephson junctions by interface treatments, PHYSICA C, 327, 1999, pp. 157-169