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Results: 1-9 |
Results: 9
Characterisation of emitter/base leakage currents in SiGeHBTs produced using selective epitaxy
Authors: Lamb, AC Schiz, JFW Bonar, JM Cristiano, F Ashburn, P Hall, S Hemment, PLF
Citation: Ac. Lamb et al., Characterisation of emitter/base leakage currents in SiGeHBTs produced using selective epitaxy, MICROEL REL, 41(2), 2001, pp. 273-279
Leakage current mechanisms in SiGeHBTs fabricated using selective and nonselective epitaxy
Authors: Schiz, JFW Lamb, AC Cristiano, F Bonar, JM Ashburn, P Hall, S Hemment, PLF
Citation: Jfw. Schiz et al., Leakage current mechanisms in SiGeHBTs fabricated using selective and nonselective epitaxy, IEEE DEVICE, 48(11), 2001, pp. 2492-2499
Formation of conducting and insulating layered structures in Si by ion implantation - Process control using FTIR spectroscopy
Authors: Katsidis, CC Siapkas, DI Robinson, AK Hemment, PLF
Citation: Cc. Katsidis et al., Formation of conducting and insulating layered structures in Si by ion implantation - Process control using FTIR spectroscopy, J ELCHEM SO, 148(12), 2001, pp. G704-G716
Silicon damage studies due to ultra-low-energy ion implantation with heavyspecies and rapid thermal annealing
Authors: Moffatt, S Hemment, PLF Whelan, S Armour, DG
Citation: S. Moffatt et al., Silicon damage studies due to ultra-low-energy ion implantation with heavyspecies and rapid thermal annealing, MAT SC S PR, 3(4), 2000, pp. 291-296
Kinetics of wet oxidation at 1000 degrees C of Si0.5Ge0.5 relaxed alloy
Authors: Zhang, JP Hemment, PLF Parker, EHC
Citation: Jp. Zhang et al., Kinetics of wet oxidation at 1000 degrees C of Si0.5Ge0.5 relaxed alloy, SEMIC SCI T, 14(5), 1999, pp. 484-487
Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys
Authors: Cristiano, F Nejim, A Suprun-Belevich, Y Claverie, A Hemment, PLF
Citation: F. Cristiano et al., Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys, NUCL INST B, 147(1-4), 1999, pp. 35-42
Ion Implantation into Semiconductors, Oxides and Ceramics - Proceedings ofthe E-MRS 1998 Spring Meeting Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, Strasbourg, France, 16-19 June 1998 - Preface
Authors: Lindner, JKN Svensson, BG Hemment, PLF Atwater, HA
Citation: Jkn. Lindner et al., Ion Implantation into Semiconductors, Oxides and Ceramics - Proceedings ofthe E-MRS 1998 Spring Meeting Symposium J on Ion Implantation into Semiconductors, Oxides and Ceramics, Strasbourg, France, 16-19 June 1998 - Preface, NUCL INST B, 147(1-4), 1999, pp. VII-VIII
Optical and electron paramagnetic resonance study of light-emitting Si+ ion implanted silicon dioxide layers
Authors: Valakh, MY Yukhimchuk, VA Bratus, VY Konchits, AA Hemment, PLF Komoda, T
Citation: My. Valakh et al., Optical and electron paramagnetic resonance study of light-emitting Si+ ion implanted silicon dioxide layers, J APPL PHYS, 85(1), 1999, pp. 168-173
Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers
Authors: Bratus, VY Valakh, MY Vorona, IP Petrenko, TT Yukhimchuk, VA Hemment, PLF Komoda, T
Citation: Vy. Bratus et al., Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers, J LUMINESC, 80(1-4), 1998, pp. 269-273
Risultati: 1-9 |