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Results: 1-16 |
Results: 16
Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Poblenz, C Heying, B Fini, P Petroff, PM DenBaars, SP Mishra, UK Speck, JS Saxler, A Elhamrib, S Mitchel, WC
Citation: Cr. Elsass et al., Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 1, 40(11), 2001, pp. 6235-6238
Capture kinetics of electron traps in MBE-grown n-GaN
Authors: Hierro, A Arehart, AR Heying, B Hansen, M Speck, JS Mishra, UK DenBaars, SP Ringel, SA
Citation: A. Hierro et al., Capture kinetics of electron traps in MBE-grown n-GaN, PHYS ST S-B, 228(1), 2001, pp. 309-313
Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy - art. no. 106802
Authors: Im, HJ Ding, Y Pelz, JP Heying, B Speck, JS
Citation: Hj. Im et al., Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy - art. no. 106802, PHYS REV L, 8710(10), 2001, pp. 6802
Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Poblenz, C Heying, B Fini, P Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: Cr. Elsass et al., Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, J CRYST GR, 233(4), 2001, pp. 709-716
Localized variations in electronic structure of AlGaN/GaN heterostructuresgrown by molecular-beam epitaxy
Authors: Smith, KV Yu, ET Elsass, CR Heying, B Speck, JS
Citation: Kv. Smith et al., Localized variations in electronic structure of AlGaN/GaN heterostructuresgrown by molecular-beam epitaxy, APPL PHYS L, 79(17), 2001, pp. 2749-2751
Electrical transport of an AlGaN/GaN two-dimensional electron gas
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, LP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Electrical transport of an AlGaN/GaN two-dimensional electron gas, MRS I J N S, 5, 2000, pp. NIL_532-NIL_537
Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
Authors: Heying, B Averbeck, R Chen, LF Haus, E Riechert, H Speck, JS
Citation: B. Heying et al., Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy, J APPL PHYS, 88(4), 2000, pp. 1855-1860
Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure
Authors: Elhamri, S Saxler, A Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: S. Elhamri et al., Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure, J APPL PHYS, 88(11), 2000, pp. 6583-6588
Characterization of an AlGaN/GaN two-dimensional electron gas structure
Authors: Saxler, A Debray, P Perrin, R Elhamri, S Mitchel, WC Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: A. Saxler et al., Characterization of an AlGaN/GaN two-dimensional electron gas structure, J APPL PHYS, 87(1), 2000, pp. 369-374
Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers
Authors: Smorchkova, IP Keller, S Heikman, S Elsass, CR Heying, B Fini, P Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers, APPL PHYS L, 77(24), 2000, pp. 3998-4000
Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy
Authors: Elsass, CR Mates, T Heying, B Poblenz, C Fini, P Petroff, PM DenBaars, SP Speck, JS
Citation: Cr. Elsass et al., Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy, APPL PHYS L, 77(20), 2000, pp. 3167-3169
Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
Authors: Heying, B Smorchkova, I Poblenz, C Elsass, C Fini, P Den Baars, S Mishra, U Speck, JS
Citation: B. Heying et al., Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy, APPL PHYS L, 77(18), 2000, pp. 2885-2887
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy
Authors: Smorchkova, IP Haus, E Heying, B Kozodoy, P Fini, P Ibbetson, JP Keller, S DenBaars, SP Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 76(6), 2000, pp. 718-720
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
Authors: Smorchkova, IP Elsass, CR Ibbetson, JP Vetury, R Heying, B Fini, P Haus, E DenBaars, SP Speck, JS Mishra, UK
Citation: Ip. Smorchkova et al., Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy, J APPL PHYS, 86(8), 1999, pp. 4520-4526
Dislocation mediated surface morphology of GaN
Authors: Heying, B Tarsa, EJ Elsass, CR Fini, P DenBaars, SP Speck, JS
Citation: B. Heying et al., Dislocation mediated surface morphology of GaN, J APPL PHYS, 85(9), 1999, pp. 6470-6476
High mobility two-dimensional electron gas in AlGaN GaN heterostructures grown by plasma-assisted molecular beam epitaxy
Authors: Elsass, CR Smorchkova, IP Heying, B Haus, E Fini, P Maranowski, K Ibbetson, JP Keller, S Petroff, PM DenBaars, SP Mishra, UK Speck, JS
Citation: Cr. Elsass et al., High mobility two-dimensional electron gas in AlGaN GaN heterostructures grown by plasma-assisted molecular beam epitaxy, APPL PHYS L, 74(23), 1999, pp. 3528-3530
Risultati: 1-16 |