Citation: H. Nagel et al., Porous SiO2 films prepared by remote plasma-enhanced chemical vapour deposition - a novel antireflection coating technology for photovoltaic modules, SOL EN MAT, 65(1-4), 2001, pp. 71-77
Citation: R. Hezel et al., A new generation of crystalline silicon solar cells: Simple processing andrecord efficiencies for industrial-size devices, SOL EN MAT, 65(1-4), 2001, pp. 311-316
Authors:
Lenkeit, B
Steckemetz, S
Artuso, F
Hezel, R
Citation: B. Lenkeit et al., Excellent thermal stability of remote plasma-enhanced chemical vapour deposited silicon nitride films for the rear of screen-printed bifacial siliconsolar cells, SOL EN MAT, 65(1-4), 2001, pp. 317-323
Citation: C. Hampe et al., Experimental evidence of very high open-circuit voltages of inversion-layer silicon solar cells, SOL EN MAT, 65(1-4), 2001, pp. 331-337
Authors:
Kuhlmann, B
Aberle, AG
Hezel, R
Heiser, G
Citation: B. Kuhlmann et al., Simulation and optimization of metal-insulator-semiconductor inversion-layer silicon solar cells, IEEE DEVICE, 47(11), 2000, pp. 2167-2178
Citation: H. Nagel et al., Optimised antireflection coatings for planar silicon solar cells using remote PECVD silicon nitride and porous silicon dioxide, PROG PHOTOV, 7(4), 1999, pp. 245-260