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Results: 1-8 |
Results: 8
High RF performance of 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs
Authors: Endoh, A Yamashita, Y Higashiwaki, M Hikosaka, K Mimura, T Hiyamizu, S Matsui, A
Citation: A. Endoh et al., High RF performance of 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs, IEICE TR EL, E84C(10), 2001, pp. 1328-1334
Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency
Authors: Yamashita, Y Endoh, A Shinohara, K Higashiwaki, M Hikosaka, K Mimura, T Hiyamizu, S Matsui, T
Citation: Y. Yamashita et al., Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency, IEEE ELEC D, 22(8), 2001, pp. 367-369
High f(T) 50-nm-gate InAlAs/InGaAs high electron mobility transistors lattice-matched to InP substrates
Authors: Yamashita, Y Endoh, A Higashiwaki, M Hikosaka, K Mimura, T Hiyamizu, S Matsui, T
Citation: Y. Yamashita et al., High f(T) 50-nm-gate InAlAs/InGaAs high electron mobility transistors lattice-matched to InP substrates, JPN J A P 2, 39(8B), 2000, pp. L838-L840
DC and RF performance of 50 nm gate pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistors grown on (411)A-oriented InP substrates by molecular-beam epitaxy
Authors: Higashiwaki, M Kitada, T Aoki, T Shimomura, S Yamashita, Y Endoh, A Hikosaka, K Mimura, T Matsui, T Hiyamizu, S
Citation: M. Higashiwaki et al., DC and RF performance of 50 nm gate pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistors grown on (411)A-oriented InP substrates by molecular-beam epitaxy, JPN J A P 2, 39(7B), 2000, pp. L720-L722
Laser operation at room temperature of self-organized In0.1Ga0.9As/(GaAs)(6)(AlAs)(1) quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy
Authors: Ohno, Y Higashiwaki, M Shimomura, S Hiyamizu, S Ikawa, S
Citation: Y. Ohno et al., Laser operation at room temperature of self-organized In0.1Ga0.9As/(GaAs)(6)(AlAs)(1) quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1672-1674
In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B GaAs substrates by molecular beam epitaxy
Authors: Hiyamizu, S Ohno, Y Higashiwaki, M Shimomura, S
Citation: S. Hiyamizu et al., In0.15Ga0.85As/GaAs quantum wire structures grown on (553)B GaAs substrates by molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 824-827
GaAs/(GaAs)(4)(AlAs)(2) quantum wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy
Authors: Higashiwaki, M Ikawa, S Shimomura, S Hiyamizu, S
Citation: M. Higashiwaki et al., GaAs/(GaAs)(4)(AlAs)(2) quantum wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 886-890
Self-organized GaAs quantum-wire lasers grown on (775) B-oriented GaAs substrates by molecular beam epitaxy
Authors: Higashiwaki, M Shimomura, S Hiyamizu, S Ikawa, S
Citation: M. Higashiwaki et al., Self-organized GaAs quantum-wire lasers grown on (775) B-oriented GaAs substrates by molecular beam epitaxy, APPL PHYS L, 74(6), 1999, pp. 780-782
Risultati: 1-8 |