Authors: Johnson, CM Wright, NG Uren, MJ Hilton, KP Rahimo, M Hinchley, DA Knights, AP Morrison, DJ Horsfall, AB Ortolland, S O'Neill, AG

Citation: Cm. Johnson et al., Recent progress and current issues in SiC semiconductor devices for power applications, IEE P-CIRC, 148(2), 2001, pp. 101-108

Authors: Morrison, DJ Pidduck, AJ Moore, V Wilding, PJ Hilton, KP Uren, MJ Johnson, CM Wright, NG O'Neill, AG

Citation: Dj. Morrison et al., Surface preparation for Schottky metal-4H-SiC contacts formed on plasma-etched SiC, SEMIC SCI T, 15(12), 2000, pp. 1107-1114

Authors: Morrison, DJ Wright, NG Horsfall, AB Johnson, CM O'Neill, AG Knights, AP Hilton, KP Uren, MJ

Citation: Dj. Morrison et al., Effect of post-implantation anneal on the electrical characteristics of Ni4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation, SOL ST ELEC, 44(11), 2000, pp. 1879-1885

Authors: Knights, AP Lourenco, MA Homewood, KP Morrison, DJ Wright, NG Ortolland, S Johnson, CM O'Neill, AG Coleman, PG Hilton, KP Uren, MJ

Citation: Ap. Knights et al., Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation, J APPL PHYS, 87(8), 2000, pp. 3973-3977

Authors: Morrison, DJ Hilton, KP Uren, MJ Wright, NG Johnson, CM O'Neill, AG

Citation: Dj. Morrison et al., Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes, MAT SCI E B, 61-2, 1999, pp. 345-348

Authors: Heaton, JM Bourke, MM Jones, SB Smith, BH Hilton, KP Smith, GW Birbeck, CH Berry, G Dewar, SV Wight, DR

Citation: Jm. Heaton et al., Optimization of deep-etched, single-mode GaAs/AlGaAs optical waveguides using controlled leakage into the substrate, J LIGHTW T, 17(2), 1999, pp. 267-281