Authors: Hinds, BJ Yamanaka, T Oda, S

Citation: Bj. Hinds et al., Emission lifetime of polarizable charge stored in nano-crystalline Si based single-electron memory, J APPL PHYS, 90(12), 2001, pp. 6402-6408

Authors: Hinds, BJ Nishiguchi, K Dutta, A Yamanaka, T Hatanani, S Oda, S

Citation: Bj. Hinds et al., Two-gate transistor for the study of Si/SiO2 interface in silicon-on-insulator nano-channel and nanocrystalline Si memory device, JPN J A P 1, 39(7B), 2000, pp. 4637-4641

Authors: Yun, F Hinds, BJ Hatatani, S Oda, S

Citation: F. Yun et al., Room temperature single-electron narrow-channel memory with silicon nanodots embedded in SiO2 matrix, JPN J A P 2, 39(8A), 2000, pp. L792-L795

Authors: Yun, F Hinds, BJ Hatatani, S Oda, S Zhao, QX Willander, M

Citation: F. Yun et al., Study of structural and optical properties of nanocrystalline silicon embedded in SiO2, THIN SOL FI, 375(1-2), 2000, pp. 137-141

Authors: Studebaker, DB Neumayer, DA Hinds, BJ Stern, CL Marks, TJ

Citation: Db. Studebaker et al., Encapsulating bis(beta-ketoiminato) polyethers. Volatile, fluorine-free barium precursors for metal-organic chemical vapor deposition, INORG CHEM, 39(15), 2000, pp. 3148-3157

Authors: Wolfe, DM Hinds, BJ Wang, F Lucovsky, G Ward, BL Xu, M Nemanich, RJ Maher, DM

Citation: Dm. Wolfe et al., Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces, J VAC SCI A, 17(4), 1999, pp. 2170-2177