Authors: Wohlfart, A Devi, A Hipler, F Becker, HW Fischer, RA

Citation: A. Wohlfart et al., Growth of porous columnar alpha-GaN layers on c-plane Al2O3 by MOCVD usingbisazido dimethylaminopropyl gallium as single source precursor, J PHYS IV, 11(PR3), 2001, pp. 683-687

Authors: Parala, H Devi, A Hipler, F Maile, E Birkner, A Becker, HW Fischer, RA

Citation: H. Parala et al., Investigations on InN whiskers grown by chemical vapour deposition, J CRYST GR, 231(1-2), 2001, pp. 68-74

Authors: Devi, A Rogge, N Wohlfart, A Hipler, F Becker, HW Fischer, RA

Citation: A. Devi et al., A study of bisazido(dimethylaminopropyl)gallium as a precursor for the OMVPE of gallium nitride thin films in a cold-wall reactor system under reduced pressure, CHEM VAPOR, 6(5), 2000, pp. 245-252