Authors:
Shields, AJ
O'Sullivan, MP
Farrer, I
Ritchie, DA
Hogg, RA
Leadbeater, ML
Norman, CE
Pepper, M
Citation: Aj. Shields et al., Detection of single photons using a field-effect transistor gated by a layer of quantum dots, APPL PHYS L, 76(25), 2000, pp. 3673-3675
Authors:
Hogg, RA
Norman, CE
Shields, AJ
Pepper, M
Iizuka, N
Citation: Ra. Hogg et al., Comparison of spontaneous and piezoelectric polarization in GaN/Al0.65Ga0.35N multi-quantum-well structures, APPL PHYS L, 76(11), 2000, pp. 1428-1430
Authors:
Hogg, RA
Sanvitto, D
Shields, AJ
Simmons, MY
Ritchie, DA
Pepper, M
Citation: Ra. Hogg et al., Carrier dynamics and recombination processes of charged excitons in a GaAs/AlGaAs quantum well, PHYSICA B, 272(1-4), 1999, pp. 412-415
Authors:
Norman, CE
Hogg, RA
Shields, AJ
Iizuka, N
Citation: Ce. Norman et al., Cathodoluminescence determination of strain-induced shifts at microcracks in GaN/AlGaN multi quantum wells, PHYS ST S-B, 216(1), 1999, pp. 375-379
Citation: K. Suzuki et al., Structural and optical properties of type IIGaSb GaAs self-assembled quantum dots grown by molecular beam epitaxy, J APPL PHYS, 85(12), 1999, pp. 8349-8352